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NTB4302T4G

Part No NTB4302T4G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 74A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 74A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 28nC @ 4.5V
Max Input Capacitance 2400pF @ 24V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 80W (Tc)
Maximum Rds On at Id,Vgs 9.3 mOhm @ 37A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1083698-NTB4302T4G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NTB4302T4G CAD Model

Description

The NTB4302T4G from ON Semiconductor is a high-performance, N-channel Power MOSFET designed to deliver efficiency and reliability for a wide range of applications. This MOSFET features advanced technology that provides low on-resistance, high switching performance, and robust thermal characteristics, making it an ideal choice for power management tasks.

Key Features

  • Low On-Resistance: The NTB4302T4G boasts a very low R<sub>DS(on), which minimizes conduction losses and improves overall efficiency, especially in applications where high current handling is essential.
  • High Switching Performance: With fast switching speeds, this MOSFET is suitable for high-frequency circuits, reducing switching losses and improving performance in power conversion systems.
  • Thermal Management: The device is encapsulated in a compact DPAK package that enhances its thermal performance, ensuring reliable operation even under high-temperature conditions.
  • Voltage Rating: It has a drain-to-source voltage (V<sub>DSS) of 30V, which is suitable for a variety of low to medium voltage applications.
  • Gate Charge: The MOSFET features an optimized gate charge (Q<sub>G), which reduces the power needed to drive the MOSFET, thereby saving energy and extending battery life in portable applications.
  • Environmentally Friendly: The NTB4302T4G is RoHS compliant, making it an environmentally friendly choice for manufacturers looking to create green products.

Applications

This versatile MOSFET can be used in a variety of electronic devices and systems. Common applications include:

  • DC/DC Converters
  • Power Supply Modules
  • Battery Management Systems
  • Motor Drives
  • Switching Regulators
  • Load Switches

With its combination of low on-resistance, high switching performance, and robust thermal properties, the ON Semiconductor NTB4302T4G MOSFET is a reliable and efficient solution for designers looking to improve the performance and efficiency of their power management systems.

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