ON Semiconductor NTB52N10T4G Power MOSFET

The NTB52N10T4G from ON Semiconductor is a high-performance Power MOSFET designed to meet the demanding requirements of modern electronic circuits. This device is part of ON Semiconductor's extensive range of power management solutions, offering energy-efficient and reliable switching for a variety of applications.

The NTB52N10T4G is a N-channel MOSFET that features a drain-to-source voltage (V<sub>DS) of 100V, making it suitable for high-voltage operations. It can handle continuous drain currents (I<sub>D) up to 52A, providing ample current capacity for most power applications. Furthermore, the device boasts a low on-state resistance (R<sub>DS(on)) of just 0.022Ω, which translates to reduced power losses and improved efficiency when conducting.

This MOSFET is designed using ON Semiconductor's advanced Trench technology, which enhances performance by minimizing on-resistance and maximizing switching speed. The NTB52N10T4G is also characterized by its robust thermal performance, with a maximum junction temperature of 175°C, ensuring reliable operation even under high temperature conditions.

The device comes in a D2PAK package, which is known for its compact footprint and excellent thermal and electrical characteristics. The package is designed for surface-mount technology (SMT), enabling easy integration into a wide range of electronic assemblies. The NTB52N10T4G is also RoHS compliant, meaning it adheres to strict environmental standards by avoiding the use of hazardous substances.

With its high current capability, low on-resistance, and efficient switching performance, the NTB52N10T4G is an ideal choice for power supply applications, motor control circuits, and any system requiring efficient power conversion and management. Whether you're designing for consumer electronics, automotive, or industrial applications, the NTB52N10T4G offers the reliability and performance needed to power your innovation.

Key Features:

• 100V Drain-to-Source Voltage (V<sub>DS)
• 52A Continuous Drain Current (I<sub>D)
• 0.022Ω On-State Resistance (R<sub>DS(on))
• High-performance Trench technology
• 175°C Maximum Junction Temperature
• D2PAK Surface-Mount Package
• RoHS Compliant