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NTB5605P

Part No NTB5605P
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 60V 18.5A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr ON Semiconductor
Package Tube
Product Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 18.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 140mOhm @ 8.5A, 5V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1190 pF @ 25 V
Power Dissipation (Max) 88W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number NTB56
Standard Package 50 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 649640-NTB5605P
Ultra Librarian 3D Model Ultra Librarian NTB5605P CAD Model

Description

The NTB5605P is a high-performance Power MOSFET brought to you by ON Semiconductor, a leading provider in energy-efficient innovations. This Power MOSFET is designed to meet the stringent requirements of modern electronic circuits, offering a perfect blend of low on-resistance and high switching speed, making it an ideal choice for a wide range of applications.

Key Features

  • Low On-Resistance: The NTB5605P is engineered to have a very low on-state resistance, which translates into reduced conduction losses and improved overall efficiency. This is particularly beneficial in applications where power efficiency is critical.
  • High Switching Speed: With its fast switching capabilities, the NTB5605P ensures minimal transition losses and is suitable for high-frequency operations, an essential feature for modern power supply designs and converters.
  • Gate Charge Optimization: The device features an optimized gate charge that helps in achieving an efficient trade-off between switching speed and on-state resistance, further enhancing its performance in various circuit configurations.
  • Enhanced Durability: ON Semiconductor has designed the NTB5605P to withstand harsh conditions, ensuring a robust and reliable performance across a broad range of operating temperatures.

Applications

The NTB5605P is versatile and can be used in numerous applications, including:

  • Power Management Solutions
  • DC/DC Converters
  • Motor Drives
  • Switch Mode Power Supplies (SMPS)
  • Automotive Applications

Technical Specifications

Some of the technical specifications of the NTB5605P Power MOSFET include:

  • Voltage Rating (V<sub>DS): 60V
  • Continuous Drain Current (I<sub>D): 54A
  • Power Dissipation (P<sub>D): 48W
  • Operating Temperature Range: -55°C to 175°C

ON Semiconductor's commitment to quality and performance is evident in the NTB5605P Power MOSFET, making it a reliable component for designers and engineers looking to enhance their power management systems.

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