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NTB6410ANG

Part No NTB6410ANG
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 76A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 76A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 120nC @ 10V
Max Input Capacitance 4500pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 188W (Tc)
Maximum Rds On at Id,Vgs 13 mOhm @ 76A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1083711-NTB6410ANG
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NTB6410ANG CAD Model

Description

The NTB6410ANG is a state-of-the-art power MOSFET from ON Semiconductor, designed to deliver high efficiency and performance for a wide range of applications. This device is part of the N-channel Trench MOSFETs, which are known for their low on-state resistance and high switching speeds.

Key Features

  • Low RDS(on): The NTB6410ANG boasts an exceptionally low on-state resistance, which minimizes conduction losses and improves overall efficiency, making it ideal for power-intensive applications.
  • High Current Capacity: With its ability to handle a continuous drain current, this MOSFET can support high-power operations without compromising on performance.
  • High Switching Speed: The fast switching capability of the NTB6410ANG ensures minimal switching losses, which is crucial for applications that require frequent on-off cycles.
  • Robust Thermal Performance: The device is encapsulated in a TO-263 package, which provides excellent heat dissipation and ensures stable operation even under high temperature conditions.
  • Simple Drive Requirements: The MOSFET is designed to work with standard gate drive voltages, simplifying the design of the driving circuitry.

Applications

The NTB6410ANG is versatile and can be used in a variety of applications, including:

  • DC/DC converters
  • Motor drives
  • Power management systems
  • Switching regulators
  • Automotive applications
  • Renewable energy systems

Reliability and Quality

ON Semiconductor is committed to providing high-quality products. The NTB6410ANG is built with rigorous standards to ensure reliability and longevity in the field. It is RoHS compliant and designed to meet the stringent requirements of industrial and automotive industries.

Summary

The NTB6410ANG from ON Semiconductor is an efficient and reliable power MOSFET that combines low on-state resistance with high current handling and fast switching speeds. Its robust thermal performance and simple drive requirements make it an excellent choice for a wide range of power applications. With ON Semiconductor's commitment to quality, the NTB6410ANG is a component you can trust for your power management needs.

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