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NTB6410ANT4G

Part No NTB6410ANT4G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 76A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 76A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 120nC @ 10V
Max Input Capacitance 4500pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 188W (Tc)
Maximum Rds On at Id,Vgs 13 mOhm @ 76A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1083710-NTB6410ANT4G
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian NTB6410ANT4G CAD Model

Description

ON Semiconductor NTB6410ANT4G - High-Efficiency N-Channel Power MOSFET

The NTB6410ANT4G is a state-of-the-art N-Channel Power MOSFET brought to you by ON Semiconductor, a leading supplier in the semiconductor industry. This power MOSFET is designed to deliver high efficiency and performance for a wide range of applications, including computing, automotive, power management, and other power-intensive electronic systems.

This robust component features a 40V drain-to-source breakdown voltage (VDS) and a continuous drain current (ID) of 64A, making it suitable for high-power applications. The NTB6410ANT4G is also characterized by a low on-resistance (RDS(on)) of just 8.7mΩ at VGS = 10V, which ensures minimal power loss and promotes energy efficiency in your designs.

With its compact and durable design, the NTB6410ANT4G comes in a TO-263 (D2PAK) package, offering excellent thermal performance and ease of integration into a variety of circuit boards. The device is capable of operating within a junction temperature range of -55°C to 175°C, demonstrating its reliability and resilience in extreme conditions.

The NTB6410ANT4G incorporates advanced technology to provide fast switching speeds, which is critical for reducing switching losses in high-frequency power conversion systems. Additionally, this MOSFET is optimized for low gate charge (QG), further enhancing its efficiency during operation.

ON Semiconductor has designed the NTB6410ANT4G with an emphasis on environmental sustainability. The device is completely lead-free, halogen-free, and RoHS compliant, making it an environmentally friendly choice for your electronics projects. By choosing the NTB6410ANT4G for your applications, you are selecting a product that not only meets high performance standards but also supports green initiatives.

Whether you're designing power supplies, motor drives, or any other system that requires efficient power handling, the NTB6410ANT4G from ON Semiconductor is an excellent choice that combines performance, reliability, and eco-conscious manufacturing.

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Pricing & Ordering

Quantity Unit Price Ext. Price
24+ $2.4210 $58.1040
59+ $1.9864 $117.1976
91+ $1.9244 $175.1204
125+ $1.8623 $232.7875
161+ $1.8002 $289.8322
215+ $1.6140 $347.0100
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,600 pieces
MOQ: 24 pcs
Order Increment : 1 pcs
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