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NTB75N06LT4

Part No NTB75N06LT4
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 75A D2PAK / Trans MOSFET N-CH 60V 75A 3-Pin(2+Tab) D2PAK T/R
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel package
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 60V
Current - Continuous Drain (Id) @ 25°C 75A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V
Vgs(th) (Maximum) @ Id 2V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 92nC @ 5V
Input Capacitance (Ciss) (Maximum) @ Vds 4370pF @ 25V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 2.4W (Ta), 214W (Tj)
Rds On (Maximum) @ Id, Vgs 11 mOhm @ 37.5A, 5V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting SMD
Manufacturer Package D2PAK
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 790840-NTB75N06LT4
Popularity Medium
Supply and Demand Status Limited
Family Name NTB75N06L
Introduction Date September 17, 2001
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian NTB75N06LT4 CAD Model

Description

ON Semiconductor NTB75N06LT4 Power MOSFET

The ON Semiconductor NTB75N06LT4 is a high-performance Power MOSFET designed to deliver efficiency and reliability for a wide range of applications. This N-channel MOSFET operates at 60V with a continuous drain current of 75A, making it an excellent choice for power-intensive tasks. The NTB75N06LT4 is part of the TrenchMOS portfolio, which utilizes advanced trench technology to provide superior performance in terms of switching speed, on-resistance, and overall energy efficiency.

With its low on-resistance of just 8.4 milliohms, the NTB75N06LT4 ensures minimal voltage drop and power loss, which is essential for maintaining efficiency in power conversion systems. This feature, combined with its robust thermal performance, makes it ideal for high-density power applications where space and thermal management are critical.

The device is encapsulated in a D2PAK package, which offers a compact footprint while allowing for effective heat dissipation. The NTB75N06LT4 is also characterized by a fast switching speed, reducing transition losses and improving the performance of the circuit. This makes it suitable for use in switch-mode power supplies (SMPS), DC-DC converters, motor drives, and other power management circuits where fast and efficient switching is required.

ON Semiconductor has designed the NTB75N06LT4 with ruggedness in mind. It features a 175°C maximum junction temperature, which provides a margin for thermal stress under high-load conditions. Additionally, it is equipped with an integrated diode for fast recovery, further enhancing its ability to handle demanding power tasks and repetitive avalanche events.

For designers looking for a MOSFET that offers a combination of high current capability, low on-resistance, and fast switching performance, the NTB75N06LT4 from ON Semiconductor is an excellent choice. Its robust design and advanced technology make it a reliable component for ensuring the efficient operation of electronic systems across various industrial and commercial applications.

With compliance to RoHS standards, the NTB75N06LT4 also meets environmental regulations, making it a sustainable option for modern electronic designs.

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