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NTBGS1D5N06C

Part No NTBGS1D5N06C
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description POWER MOSFET, 60 V, 1.62 M?, 267  /  N-Channel 60 V 35A (Ta), 267A (Tc) 3.7W (Ta), 211W (Tc) Surface Mount D2PAK (TO-263)
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Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr onsemi
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 35A (Ta), 267A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V, 12V
Rds On (Max) @ Id, Vgs 1.55mOhm @ 64A, 12V
Vgs(th) (Max) @ Id 4V @ 318µA
Gate Charge (Qg) (Max) @ Vgs 78.6 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6250 pF @ 30 V
Power Dissipation (Max) 3.7W (Ta), 211W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package D2PAK (TO-263)
Package / Case TO-263-7, D²Pak (6 Leads + Tab)
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 488-NTBGS1D5N06CCT,488-NTBGS1D5N06CTR,488-NTBGS1D5N06CDKR
Standard Package 800
Win Source Part Number 1116263-NTBGS1D5N06C
Ultra Librarian 3D Model Ultra Librarian NTBGS1D5N06C CAD Model

Description

ON Semiconductor NTBGS1D5N06C MOSFET

The ON Semiconductor NTBGS1D5N06C is a high-performance, N-Channel Power MOSFET designed to meet the rigorous demands of a wide range of power applications. This device is part of ON Semiconductor's advanced MOSFET technology line, which is renowned for its exceptional quality and reliability.

Key Features:

  • Low On-Resistance: The NTBGS1D5N06C boasts a low on-resistance (R<sub>DS(on)), which minimizes conduction losses and enhances overall efficiency, making it suitable for high-efficiency power management systems.
  • High Switching Speed: Engineered for fast switching performance, this MOSFET is ideal for applications requiring high-speed operation, such as switching power supplies and DC-DC converters.
  • Power Dissipation: With a power dissipation of 48W, this device can handle significant power, ensuring reliable operation under challenging conditions.
  • Voltage Rating: The NTBGS1D5N06C operates at a drain-source voltage (V<sub>DSS) of 60V, which provides a comfortable margin for a variety of applications, from industrial to consumer electronics.
  • Gate Charge: Its low gate charge (Q<sub>G) results in reduced switching losses, which is critical for high-frequency power switching applications.
  • Temperature Performance: Capable of operating within a junction temperature range of -55°C to 150°C, the NTBGS1D5N06C is designed to withstand extreme conditions without compromising performance.

Applications:

The versatility of the NTBGS1D5N06C makes it suitable for a broad array of applications, including:

  • Power Supply Circuits
  • DC-DC Converters
  • Motor Drives
  • Automotive Applications
  • Power Management Solutions

Package and Quality:

Encased in a compact DPAK (TO-252) package, the NTBGS1D5N06C is designed for surface-mount technology (SMT), which allows for efficient assembly and space-saving PCB design. ON Semiconductor's commitment to quality ensures that each MOSFET meets the highest standards for performance and reliability.

With its robust feature set, the ON Semiconductor NTBGS1D5N06C is a powerful component for designers seeking to enhance the efficiency and performance of their power systems.

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