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Same model may have multiple batches, images only for reference.
SI1054X-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI1054X-T1-E3

Part No SI1054X-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SI1054X-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel (TR)
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12 V
Current - Continuous Drain (Id) @ 25°C 1.32A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 95mOhm @ 1.32A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.57 nC @ 5 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 480 pF @ 6 V
Power Dissipation (Max) 236mW (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package SC-89 (SOT-563F)
Package / Case SOT-563, SOT-666
Base Product Number SI1054
Standard Package 3,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 1277525-SI1054X-T1-E3
Ultra Librarian 3D Model Ultra Librarian SI1054X-T1-E3 CAD Model

Description

The Vishay Siliconix SI1054X-T1-E3 is an N-channel MOSFET designed for use in discrete semiconductor products.

  • Drain to Source Voltage (Vdss): 12V
  • Continuous Drain Current (Id): 1.32A @ 25°C
  • Rds On (Max): 95mOhm @ 1.32A and 4.5V
  • Vgs(th) (Max): 1V @ 250μA
  • Gate Charge (Qg) (Max): 8.57 nC @ 5V
  • Input Capacitance (Ciss) (Max): 480pF @ 6Vds
  • Power Dissipation (Max): 236mW (Ta)
  • Mounting: Surface-Mounting
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Package: SOT-563 or SOT-666

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