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Same model may have multiple batches, images only for reference.
SIHP120N60E-GE3 Real Image
Same model may have multiple batches, images only for reference.

SIHP120N60E-GE3

Part No SIHP120N60E-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 25A TO220AB  /  N-Channel 600 V 25A (Tc) 179W (Tc) Through Hole TO-220AB
Datasheet
SIHP120N60E-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series E
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 120mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 45 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1562 pF @ 100 V
Power Dissipation (Max) 179W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Base Product Number SIHP120
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 50
Win Source Part Number 1216659-SIHP120N60E-GE3
Ultra Librarian 3D Model Ultra Librarian SIHP120N60E-GE3 CAD Model

Description

The Vishay SIHP120N60E-GE3 is an N-channel MOSFET with a drain to source voltage of 600V and a continuous drain current of 25A @ 25°C.

  • Drain to Source Voltage: 600V
  • Continuous Drain Current: 25A @ 25°C
  • Rds On: 120mOhm @ 12A and 10V
  • Gate Charge: 45 nC @ 10V
  • Maximum Power Dissipation: 179W @ Tc
  • Gate-Source Voltage: ±30V
  • Category: Discrete semiconductor products
  • Package Type: TO-220-3
  • Mounting: Through hole
  • Packaging: Tube of 50
  • Suitable for: High voltage switching

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