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NTD12N10G

Part No NTD12N10G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 12A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 12A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 20nC @ 10V
Max Input Capacitance 550pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.28W (Ta), 56.6W (Tc)
Maximum Rds On at Id,Vgs 165 mOhm @ 6A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1083745-NTD12N10G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NTD12N10G CAD Model

Description

The NTD12N10G is a state-of-the-art N-channel MOSFET produced by ON Semiconductor, a leader in power and signal management. This power MOSFET is designed to deliver high efficiency and power density for a wide range of applications, making it a versatile component for designers and engineers.

Key Features and Benefits

  • Low On-Resistance: The NTD12N10G features a low on-resistance of typically 8.4 mΩ, which results in reduced conduction losses and improved power efficiency.
  • High Current Capacity: With a continuous drain current of 12 A, this MOSFET can handle significant power, making it suitable for high-performance applications.
  • High Voltage Tolerance: The device is rated for a drain-to-source voltage (V<sub>DS) of 100 V, providing a wide safety margin for voltage spikes and surges.
  • Low Gate Charge: A low gate charge (Q<sub>G) facilitates faster switching speeds, which is beneficial in switching power supply and power conversion applications.
  • Rugged Design: The NTD12N10G is designed to withstand harsh conditions and is characterized by its robustness in terms of thermal and electrical performance.

Applications

The NTD12N10G MOSFET is suitable for a variety of applications, including but not limited to:

  • Power supply units (PSUs)
  • DC-DC converters
  • Motor drives
  • Automotive applications
  • Switching applications where efficiency is critical

Environmental and Quality Certifications

ON Semiconductor is committed to environmental stewardship and the NTD12N10G is manufactured in compliance with the latest environmental standards, including RoHS and REACH. Additionally, the product adheres to strict quality management systems, ensuring reliability and performance in the field.

Conclusion

The NTD12N10G from ON Semiconductor is an excellent choice for designers looking for a high-performance N-channel MOSFET. Its combination of low on-resistance, high current capacity, and fast switching speeds makes it a highly efficient solution for a wide range of power applications. With its rugged design and compliance with environmental standards, the NTD12N10G stands out as a reliable and eco-friendly component in the semiconductor market.

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.6320 $65.2800
90+ $1.3398 $120.5820
135+ $1.2982 $175.2570
185+ $1.2555 $232.2675
240+ $1.2139 $291.3360
320+ $1.0880 $348.1600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,300 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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