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APT20F50B

Part No APT20F50B
Manufacturer Microsemi Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 20A TO-247
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 500μA
Max Gate Charge 75nC @ 10V
Max Input Capacitance 2950pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 290W (Tc)
Maximum Rds On at Id,Vgs 300 mOhm @ 10A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247 [B]
Dimension TO-247-3
Win Source Part Number 051442-APT20F50B
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Power Management
Quantity per package 1
Ultra Librarian 3D Model Ultra Librarian APT20F50B CAD Model

Description

APT20F50B Description

The APT20F50B is a high-voltage, ultra-fast recovery diode designed to provide exceptional efficiency and reliability. This component is optimal for various demanding applications that require high-speed switching performance.

  • Applications: Suitable for use in power supplies, inverters, and motor drives.
  • Features:
    • Ultra-fast recovery time
    • Low forward voltage drop
    • High current capability
    • Robust construction for durability
  • Benefits:
    • Enhances efficiency in power conversion systems
    • Reduces energy loss
    • Provides reliable performance in high-stress environments
  • Additional Details: The diode is optimized for reducing electromagnetic interference and increasing thermal stability, making it an ideal choice for high-performance electronic systems.

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