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NTD12N10T4

Part No NTD12N10T4
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 12A DPAK
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 12A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 20nC @ 10V
Max Input Capacitance 550pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.28W (Ta), 56.6W (Tc)
Maximum Rds On at Id,Vgs 165 mOhm @ 6A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 004137-NTD12N10T4
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian NTD12N10T4 CAD Model

Description

The NTD12N10T4 from ON Semiconductor is a high-performance, N-channel Power MOSFET designed to deliver efficient power management and switching in various electronic applications. This MOSFET is part of ON Semiconductor's PowerTrench® technology, which ensures minimal on-resistance and low gate charge, leading to reduced power losses and improved overall efficiency.

Key Features

  • Drain-to-Source Voltage (V<sub>DS): 100V - This feature allows the NTD12N10T4 to handle high voltage applications, making it suitable for a wide range of power supply and conversion systems.
  • Continuous Drain Current (I<sub>D): 12A - The MOSFET can continuously conduct up to 12 amperes of current, which is ideal for high current applications.
  • R<sub>DS(on): 0.075Ω - The low on-resistance indicates that the device has a low voltage drop when conducting, which translates to lower heat generation and higher efficiency in operation.
  • Fast Switching Speed: The device's fast switching capabilities ensure that it can handle high-speed operations, which is essential for switching power supplies and other applications that require rapid on-off cycles.
  • High Power Dissipation: With a power dissipation of 48W, the NTD12N10T4 can handle significant amounts of power, which is beneficial for high power applications.

Applications

The NTD12N10T4 MOSFET is versatile and can be used in a variety of applications, including:

  • DC/DC converters
  • Power management systems
  • Motor control circuits
  • Automotive applications
  • Switching regulators
  • LED lighting solutions

Advantages

The NTD12N10T4 offers several advantages for designers and engineers:

  • Enhanced thermal performance due to its low on-resistance, which reduces the need for additional cooling measures.
  • Robustness and reliability, thanks to ON Semiconductor's proven manufacturing processes and rigorous quality control.
  • Energy-saving potential through high efficiency, which is increasingly important in modern electronic designs focused on sustainability and reducing energy consumption.

With these features and benefits, the NTD12N10T4 from ON Semiconductor stands out as a solid choice for anyone looking to incorporate a reliable and efficient power MOSFET into their electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $0.9794 $58.7640
145+ $0.8039 $116.5655
225+ $0.7785 $175.1625
310+ $0.7531 $233.4610
400+ $0.7277 $291.0800
535+ $0.6526 $349.1410
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 20,000 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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