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NTD20N06-1G

Part No NTD20N06-1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 20A IPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 20A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 30nC @ 10V
Max Input Capacitance 1015pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.88W (Ta), 60W (Tj)
Maximum Rds On at Id,Vgs 46 mOhm @ 10A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package I-Pak
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 1083757-NTD20N06-1G
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Power Management, Motor Drive & Control, Industrial
Ultra Librarian 3D Model Ultra Librarian NTD20N06-1G CAD Model

Description

The NTD20N06-1G from ON Semiconductor is a high-performance Power MOSFET designed to meet the rigorous demands of power regulation in a wide array of electronic applications. This component is part of ON Semiconductor's renowned NTD series, which is known for its efficiency, reliability, and thermal performance.

Key Features

  • High Drain-Source Voltage (VDS): With a rating of 60V, this MOSFET can handle significant voltage levels, making it suitable for a variety of circuits that require high voltage operations.
  • Continuous Drain Current (ID): It supports a continuous drain current of 20A, ensuring that it can manage heavy current loads without performance degradation.
  • Low On-Resistance (RDS(on)): The low on-resistance of this device minimizes conduction losses, leading to higher efficiency and reduced heat generation within circuits.
  • Fast Switching Speed: The fast switching capability of the NTD20N06-1G makes it an excellent choice for applications where rapid switching is crucial, such as switching power supplies and DC-DC converters.
  • Single Pulse Avalanche Energy (Eas): This MOSFET is capable of withstanding high energy pulses in the avalanche and commutation modes, which is critical for applications that experience transient voltage spikes.

Applications

The NTD20N06-1G is versatile and can be used in various applications, including:

  • Power supply regulation
  • DC-DC converters
  • Motor control circuits
  • Automotive applications
  • Power management solutions

Quality and Reliability

ON Semiconductor is committed to providing products that meet the highest standards of quality and reliability. The NTD20N06-1G is no exception, as it undergoes rigorous testing and quality control measures to ensure it performs to specifications under varying conditions.

Environmental Compliance

The NTD20N06-1G is RoHS compliant, ensuring that it adheres to the European Union's restrictions on the use of certain hazardous substances in electrical and electronic equipment. This commitment to environmental responsibility makes it a suitable choice for eco-conscious applications and manufacturers.

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