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NTD3055L170-1G

Part No NTD3055L170-1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 9A IPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 10nC @ 5V
Max Input Capacitance 275pF @ 25V
Maximum Gate-Source Voltage ±15V
Power Dissipation (Max) 1.5W (Ta), 28.5W (Tj)
Maximum Rds On at Id,Vgs 170 mOhm @ 4.5A, 5V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package I-Pak
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 060600-NTD3055L170-1G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NTD3055L170-1G CAD Model

Description

ON Semiconductor NTD3055L170-1G N-Channel Power MOSFET

The ON Semiconductor NTD3055L170-1G is a high-performance N-Channel Power MOSFET designed to deliver efficient power management and conversion within a wide array of electronic applications. This robust transistor is a perfect choice for designers looking for a component that offers low on-resistance, high switching speed, and excellent thermal performance.

With a maximum continuous drain current of 12 A, the NTD3055L170-1G is capable of handling significant power levels, making it suitable for high-power circuits. The device operates at a maximum drain-source voltage (Vds) of 60V, providing a wide margin for various circuit voltages and ensuring reliable operation under fluctuating conditions.

The NTD3055L170-1G boasts an RDS(on) value as low as 0.17Ω at a 10V gate drive, which means it has a very low resistance in the conducting state, thus reducing power losses and improving efficiency. This feature is particularly important in applications where energy conservation is crucial, such as in power supply units, DC-DC converters, and motor control circuits.

One of the key advantages of this MOSFET is its TO-220 package, which is widely recognized for its ease of mounting and excellent thermal dissipation characteristics. The package's design allows for effective heat transfer from the MOSFET die to the surrounding environment, which is vital for maintaining the longevity and reliability of the device under high-power operation or in high-temperature environments.

The NTD3055L170-1G also features a fast switching speed, which is essential for reducing switching losses in applications where the MOSFET is required to turn on and off frequently, such as in pulse-width modulation (PWM) circuits. This capability ensures that the device can be used in high-frequency power switching applications without compromising performance.

In summary, the ON Semiconductor NTD3055L170-1G is a versatile and efficient N-Channel Power MOSFET that offers low on-resistance, high switching speed, and excellent thermal performance. Its robust design and TO-220 package make it an ideal choice for a wide range of power management applications, ensuring reliable operation and energy efficiency.

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.5870 $63.4800
90+ $1.3028 $117.2520
140+ $1.2624 $176.7360
190+ $1.2208 $231.9520
245+ $1.1804 $289.1980
330+ $1.0580 $349.1400
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,100 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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