The NTD3055L170G is a high-performance, N-channel Power MOSFET designed and manufactured by ON Semiconductor. This field-effect transistor is part of ON Semiconductor's Power MOSFET portfolio, which is renowned for its efficiency, reliability, and thermal performance.

Key Features

• Low Drain-Source On-Resistance: The NTD3055L170G boasts a low R<sub>DS(on) value, which enhances its efficiency by reducing power losses during operation.
• High Current Capability: This MOSFET can handle continuous drain currents up to 12 A, making it suitable for high-power applications.
• Maximum Voltage: It supports drain-to-source voltages up to 60V, providing a good safety margin for a variety of electronic circuits.
• Advanced Technology: Utilizing ON Semiconductor's advanced trench technology, the NTD3055L170G offers superior performance in a compact package.
• Thermal Management: The device is encapsulated in a TO-252 (DPAK) package, which aids in effective heat dissipation and ensures stable operation even at high temperatures.

Applications

The NTD3055L170G is versatile and can be used in a wide range of electronic applications. Some of its common uses include:

• Power supply circuits
• DC-DC converters
• Motor control systems
• Automotive applications
• Switching regulators

Quality and Reliability

ON Semiconductor is committed to delivering high-quality products. The NTD3055L170G is no exception, with its design and manufacturing processes focused on achieving high reliability and performance consistency. The device is RoHS compliant, ensuring it meets current environmental standards for electronic components.

Product Summary

Overall, the NTD3055L170G from ON Semiconductor is a robust and efficient solution for a variety of power management and switching applications.