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NTD30N02G

Part No NTD30N02G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 24V 30A DPAK  /  N-Channel 24 V 30A (Ta) 75W (Tj) Surface Mount DPAK
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Rohs State Need to verify
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr onsemi
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 24 V
Current - Continuous Drain (Id) @ 25°C 30A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 14.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 4.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1000 pF @ 20 V
Power Dissipation (Max) 75W (Tj)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number NTD30
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 2156-NTD30N02G-ON,ONSONSNTD30N02G
Standard Package 75
Win Source Part Number 1082879-NTD30N02G
Ultra Librarian 3D Model Ultra Librarian NTD30N02G CAD Model

Description

ON Semiconductor NTD30N02G Overview

The NTD30N02G is a cutting-edge power MOSFET designed by ON Semiconductor, a brand renowned for its high-quality and reliable semiconductor components. This particular MOSFET is part of the NTD series, which is engineered to deliver exceptional performance in a wide range of applications. The NTD30N02G is an optimal solution for designers looking for a component that offers a blend of efficiency, thermal performance, and power density.

Key Features

  • Low R<sub>DS(on): The NTD30N02G boasts a low on-resistance, which translates to reduced conduction losses and improved power efficiency in applications.
  • High Current Capability: With the ability to handle a continuous drain current of up to 24A, this MOSFET is suitable for high current applications.
  • Optimized Gate Charge: The device features an optimized gate charge, which helps in achieving faster switching speeds and reduces switching losses.
  • Robust Thermal Performance: The NTD30N02G is designed with an excellent thermal performance in mind, ensuring reliability even under high temperature operating conditions.

Applications

The versatility of the NTD30N02G makes it ideal for a broad array of applications. It is commonly used in power management tasks within automotive systems, DC/DC converters, and power supplies. Additionally, it can be found in motor control circuits, lighting solutions, and other high-performance power switching applications.

Technical Specifications

Parameter Value Drain-to-Source Voltage (V<sub>DSS) 24V Continuous Drain Current (I<sub>D) 24A Power Dissipation (P<sub>D) 48W R<sub>DS(on) 8.4 mΩ

In conclusion, the NTD30N02G from ON Semiconductor is a high-performance MOSFET that offers significant advantages for modern electronic designs. Its low on-resistance, high current capability, and excellent thermal characteristics make it a top choice for engineers and designers looking to enhance the efficiency and reliability of their power management systems.

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