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NTD30N02T4

Part No NTD30N02T4
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 24V 30A DPAK
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 24V
Continuous Drain Current at 25°C 30A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 20nC @ 4.5V
Max Input Capacitance 1000pF @ 20V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 75W (Tj)
Maximum Rds On at Id,Vgs 14.5 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1083779-NTD30N02T4
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NTD30N02T4 CAD Model

Description

ON Semiconductor NTD30N02T4 Power MOSFET Overview

The ON Semiconductor NTD30N02T4 is a high-performance Power MOSFET designed to meet the demanding requirements of modern electronic circuits. Ideal for a wide range of applications, including power management, switching regulators, and motor control, this MOSFET stands out for its efficiency, reliability, and thermal performance.

Key Features and Benefits

  • Low R<sub>DS(on): The NTD30N02T4 boasts a low on-state resistance, which minimizes conduction losses and improves overall efficiency. This feature is particularly beneficial in applications where power conservation is critical.
  • High Current Capability: With a continuous drain current of up to 24A, this MOSFET can handle high current loads, making it suitable for power-intensive applications.
  • Robust Thermal Performance: The device is encapsulated in a TO-252 (DPAK) package, which offers excellent thermal characteristics for better heat dissipation. This ensures stable performance even under high temperature operating conditions.
  • Logic Level Gate Drive: The NTD30N02T4 can be driven by logic-level voltages, which simplifies the interface with microcontrollers and reduces the complexity of the driving circuitry.
  • Fast Switching Speed: The device is engineered for fast switching, reducing switching losses and enhancing the performance in high-frequency applications.

Applications

The versatility of the NTD30N02T4 Power MOSFET makes it suitable for a variety of applications, including:

  • DC/DC Converters
  • Power Supplies
  • Motor Drives
  • Battery Management Systems
  • Automotive Applications
  • Switching Regulators

Reliability and Quality Assurance

ON Semiconductor is committed to providing high-quality products. The NTD30N02T4 Power MOSFET is produced with rigorous quality control measures and is designed to meet the stringent standards required by the industry. Users can trust in the reliability and performance of this MOSFET for their critical applications.

With its combination of low on-resistance, high current handling, and efficient thermal management, the NTD30N02T4 from ON Semiconductor is an excellent choice for designers looking to optimize their power circuitry with a robust and efficient MOSFET solution.

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