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NTD3817NT4G

Part No NTD3817NT4G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 16V 7.6A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 16V
Continuous Drain Current at 25°C 7.6A (Ta), 34.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 10.5nC @ 4.5V
Max Input Capacitance 702pF @ 12V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 1.2W (Ta), 25.9W (Tc)
Maximum Rds On at Id,Vgs 13.9 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1083788-NTD3817NT4G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NTD3817NT4G CAD Model

Description

The NTD3817NT4G is a high-performance N-Channel Power MOSFET designed and manufactured by ON Semiconductor, a recognized leader in the semiconductor industry. This MOSFET is part of ON Semiconductor's portfolio of energy-efficient devices, offering a combination of low on-resistance and high switching speed, making it an ideal choice for a wide range of power management applications.

Key Features

  • Low On-Resistance: The device features very low R<sub>DS(on), which minimizes conduction losses and enhances the power efficiency of the application it is used in.
  • High Switching Speed: Fast switching characteristics ensure efficient operation at high frequencies, which is crucial for power supply and DC-DC converter applications.
  • High Maximum Current: The MOSFET can handle a continuous drain current of up to 30 A, making it suitable for high current applications.
  • High Voltage Tolerance: With a maximum drain-to-source voltage (V<sub>DSS) of 30 V, it can be used in systems with relatively high voltage requirements.
  • Power Dissipation: Capable of dissipating up to 48 W of power, ensuring reliable operation under a wide range of conditions.
  • Temperature Performance: Operational over a wide temperature range, with a junction temperature capability of -55°C to 175°C.

Applications

The NTD3817NT4G is versatile and can be used in various applications, including:

  • DC/DC converters
  • Power supply modules
  • Motor drives
  • Automotive applications
  • Switching regulators

Package and Environmental Compliance

The NTD3817NT4G comes in a compact DPAK (TO-252) package, which is suitable for surface-mount technology (SMT) and occupies minimal space on a printed circuit board. Additionally, it is compliant with RoHS (Restriction of Hazardous Substances) standards, which means it is free from environmentally harmful substances like lead, making it a more environmentally friendly choice for electronic products.

With its robust design and high-efficiency performance, the NTD3817NT4G from ON Semiconductor is a reliable and cost-effective solution for designers seeking to improve the power management in their electronic systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
180+ $0.3262 $58.7160
435+ $0.2677 $116.4495
670+ $0.2593 $173.7310
925+ $0.2510 $232.1750
1,195+ $0.2426 $289.9070
1,595+ $0.2175 $346.9125
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 12,500 pieces
MOQ: 180 pcs
Order Increment : 1 pcs
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