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NTD4302-1G

Part No NTD4302-1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 8.4A IPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 8.4A (Ta), 68A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 80nC @ 10V
Max Input Capacitance 2400pF @ 24V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.04W (Ta), 75W (Tc)
Maximum Rds On at Id,Vgs 10 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package I-Pak
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 1083789-NTD4302-1G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NTD4302-1G CAD Model

Description

The NTD4302-1G is a high-performance Power MOSFET brought to you by ON Semiconductor, a trusted leader in innovative energy-efficient semiconductor technologies. This product is specifically designed to meet the rigorous demands of today's electronic devices and power systems. The NTD4302-1G is part of the N-channel MOSFET family and is widely recognized for its efficiency and reliability.

Key Features

  • Low R<sub>DS(on): This device offers a very low on-resistance, which translates to reduced conduction losses and improved power efficiency in applications.
  • High Current Capacity: With its ability to handle a substantial continuous drain current, the NTD4302-1G is suitable for high-power applications.
  • Optimized Gate Charge: The MOSFET is designed with an optimized gate charge to reduce switching losses without compromising on its ability to handle high currents.
  • Robust Thermal Performance: The thermal management of the NTD4302-1G is outstanding, ensuring reliability even under high temperature operating conditions.
  • Lead-Free and RoHS Compliant: In line with global environmental standards, the NTD4302-1G is lead-free and conforms to the RoHS directive, making it an environmentally responsible choice.

Applications

The versatility of the NTD4302-1G MOSFET makes it suitable for a broad range of applications. It is commonly used in power management circuits, DC-DC converters, motor drives, and as a switch in various electronic devices. Its high efficiency and thermal performance also make it ideal for more demanding applications such as power supplies, automotive systems, and renewable energy solutions.

Quality and Reliability

ON Semiconductor is committed to delivering products that meet the highest standards of quality and reliability. The NTD4302-1G has undergone rigorous testing and quality control measures to ensure it performs to the specifications under a variety of conditions. Customers can trust this MOSFET to deliver consistent performance and longevity in their applications.

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