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NTD4806NA-35G

Part No NTD4806NA-35G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 11A IPAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 11.3A (Ta), 79A (Tc)
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 23nC @ 4.5V
Max Input Capacitance 2142pF @ 12V
Maximum Rds On at Id,Vgs 6 mOhm @ 30A, 10V
Mounting Through Hole
Case / Package I-Pak
Dimension TO-251-3 Stub Leads, IPak
Win Source Part Number 209336-NTD4806NA-35G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NTD4806NA-35G CAD Model

Description

ON Semiconductor NTD4806NA-35G - Power MOSFET

The NTD4806NA-35G is a high-performance Power MOSFET brought to you by ON Semiconductor, a trusted leader in power and signal management. This particular MOSFET is designed to cater to a wide array of applications, ranging from power supply switches to motor drivers, ensuring efficient power management in electronic devices.

Built using advanced Trench Technology, the NTD4806NA-35G boasts an impressive R<sub>DS(on) value, which translates to reduced conduction losses and improved overall efficiency. This feature is particularly important for applications that require high current handling capabilities while maintaining a low thermal footprint.

The device is encapsulated in a RoHS-compliant, compact and surface-mountable DPAK (TO-252) package, which not only saves precious board space but also offers robustness and durability for various environmental conditions. With its lead-free finish, it is designed to meet current environmental standards, making it an ideal choice for eco-friendly and sustainable product designs.

The NTD4806NA-35G has a continuous drain current (I<sub>D) of 30 A and a drain-source voltage (V<sub>DSS) of 30 V, which makes it suitable for high-power applications. The device also features fast switching speeds, contributing to reduced switching losses, and is characterized by a low gate charge (Q<sub>g), which enhances its performance in high-frequency circuits.

ON Semiconductor's commitment to quality ensures that the NTD4806NA-35G MOSFET is reliable and performs consistently. It is ideal for designers looking to optimize power efficiency and thermal management in their circuit designs. Whether it's for power regulation in consumer electronics, automotive applications, or industrial systems, the NTD4806NA-35G is engineered to meet the rigorous demands of modern electronic devices.

In summary, the NTD4806NA-35G from ON Semiconductor is a powerful solution for anyone needing a high-efficiency, space-saving, and environmentally conscious power MOSFET. Its advanced features and robust packaging make it a versatile component for a wide range of power management applications.

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