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NTD4809N-1G

Part No NTD4809N-1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 9A IPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 9.6A (Ta), 58A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 11.5V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 13nC @ 4.5V
Max Input Capacitance 1456pF @ 12V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.4W (Ta), 52W (Tc)
Maximum Rds On at Id,Vgs 9 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package I-Pak
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 060605-NTD4809N-1G
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian NTD4809N-1G CAD Model

Description

ON Semiconductor NTD4809N-1G Power MOSFET

The ON Semiconductor NTD4809N-1G is a high-performance Power MOSFET designed to meet a wide range of applications requiring efficient power management and switching. This device is part of the N-channel Power MOSFET product line and is well-suited for various power supply, converter, and motor control applications.

The NTD4809N-1G boasts an advanced silicon technology that provides superior on-state resistance (R<sub>DS(on)) with low gate charge, resulting in a product that is highly efficient in minimizing conduction and switching losses. This makes the NTD4809N-1G an ideal choice for high-efficiency power management designs.

Key Features:

  • Voltage Rating: The NTD4809N-1G operates at a drain-source voltage (V<sub>DSS) of 30V, making it suitable for a broad range of low-voltage applications.
  • Current Capacity: It can handle continuous drain currents (I<sub>D) up to 48A, providing ample current for demanding power applications.
  • Low R<sub>DS(on): With an ultra-low on-state resistance, the device ensures minimal voltage drop across the MOSFET when conducting, leading to enhanced power efficiency.
  • High-Speed Switching: The fast switching speed of the NTD4809N-1G is essential for applications requiring high-frequency operation.
  • Thermal Performance: The device is encapsulated in a robust package that enhances its thermal characteristics, ensuring reliable operation even under high-temperature conditions.
  • RoHS Compliant: The NTD4809N-1G is compliant with RoHS standards, adhering to environmental regulations and minimizing the use of hazardous substances.

Applications:

  • DC to DC Converters: Its efficiency makes it suitable for use in buck or boost converters that require high switching frequencies.
  • Power Supplies: The NTD4809N-1G can be used in the power stages of both linear and switching power supplies.
  • Motor Control: With its high current capacity and fast switching, it is ideal for controlling motors in automotive and industrial applications.

The NTD4809N-1G from ON Semiconductor represents a blend of performance, efficiency, and reliability, making it an excellent choice for designers looking to optimize their power management systems. Its combination of features ensures that it can meet the demands of a wide array of power applications.

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