ON Semiconductor NTD4860N N-Channel Power MOSFET
The ON Semiconductor NTD4860N is a high-performance N-Channel Power MOSFET designed to address a wide range of power management and switching applications. This device is part of ON Semiconductor's Power MOSFET portfolio, which is renowned for its efficiency, reliability, and thermal performance.
Key Features:
- Low On-Resistance: The NTD4860N features a very low on-state resistance (R<sub>DS(on)), which minimizes conduction losses and improves overall efficiency, making it ideal for high-efficiency power supplies and DC-DC converters.
- High Current Capability: With a continuous drain current (I<sub>D) of up to 30A, this MOSFET can handle high current loads, suitable for a variety of demanding applications.
- High-Speed Switching: The fast switching speed of the NTD4860N enables efficient operation at higher frequencies, which can reduce the size of passive components and the overall footprint of the power supply circuit.
- Low Gate Charge: A low total gate charge (Q<sub>g) reduces the power required to drive the MOSFET, thereby decreasing the power dissipation in the driving circuit.
- Enhanced Thermal Performance: The NTD4860N is encapsulated in a TO-252 (DPAK) package, which offers excellent thermal conduction properties, allowing for better heat dissipation and improved reliability.
Applications:
The versatility of the NTD4860N makes it suitable for a broad range of applications, including:
- Power supply circuits
- DC-DC converters
- Motor control systems
- Automotive applications
- Switching regulators
- Synchronous rectification
Technical Specifications:
Parameter
Value
V<sub>DS (Drain-Source Voltage)
30V
R<sub>DS(on)
7.5 mΩ
I<sub>D (Continuous Drain Current)
30A
Q<sub>g (Total Gate Charge)
13 nC
With its robust design and superior electrical characteristics, the ON Semiconductor NTD4860N N-Channel Power MOSFET is a solid choice for designers looking to enhance power efficiency and performance in their next-generation electronic designs.