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NTD4863N-1G

Part No NTD4863N-1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 9.2A IPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 9.2A (Ta), 49A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 13.5nC @ 4.5V
Max Input Capacitance 990pF @ 12V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.27W (Ta), 36.6W (Tc)
Maximum Rds On at Id,Vgs 9.3 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package I-Pak
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 1083811-NTD4863N-1G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NTD4863N-1G CAD Model

Description

ON Semiconductor NTD4863N-1G - N-Channel Power MOSFET

The ON Semiconductor NTD4863N-1G is a high-performance N-Channel Power MOSFET designed for a variety of applications that require efficient power management and high-speed switching. This device is a testament to ON Semiconductor's commitment to providing energy-efficient solutions that help reduce the global environmental impact.

With a drain-to-source voltage (Vdss) of 30V, a continuous drain current (Id) of 30A, and a power dissipation of 48W, the NTD4863N-1G is capable of handling significant power requirements. Its low on-state resistance (Rds on) of just 7.5mΩ at Vgs = 10V ensures efficient operation with minimal losses, making it an excellent choice for power conversion applications.

One of the standout features of this MOSFET is its advanced trench technology, which provides superior performance in terms of switching speed and reliability. The device's fast switching characteristics make it suitable for high-frequency applications, such as DC-DC converters, motor drives, and power management systems in computing, automotive, and consumer electronics.

The NTD4863N-1G comes in a robust and compact TO-252 (DPAK) package, which offers excellent thermal performance and is suitable for surface mount technology (SMT). The package is designed to withstand harsh environments, ensuring long-term reliability and stability in your electronic designs.

Moreover, the MOSFET features a maximum junction temperature of 175°C, providing a wide operating temperature range that ensures stable performance even under extreme conditions. It also includes built-in ESD protection, safeguarding the device from electrostatic discharges during handling and operation.

With its combination of high efficiency, fast switching, and robust packaging, the ON Semiconductor NTD4863N-1G N-Channel Power MOSFET is an ideal choice for designers looking to optimize their power management solutions. Whether it's being used in power supplies, lighting systems, or any other application that demands reliable and efficient power control, the NTD4863N-1G delivers performance you can count on.

For detailed specifications and application notes, designers and engineers are encouraged to consult the official datasheet and technical resources provided by ON Semiconductor.

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