Product Overview: NTD4906N-35G by ON Semiconductor

The NTD4906N-35G is a high-performance Power MOSFET manufactured by ON Semiconductor, a leading provider of semiconductor-based solutions. This efficient N-Channel MOSFET is designed to handle high power and current efficiently, making it an ideal choice for a wide range of power management applications.

Key Features

• Low R<sub>DS(on): The device boasts a low on-resistance, which translates to reduced conduction losses and improved power efficiency.
• High Continuous Drain Current (I<sub>D): With a high continuous drain current of 30 A, the NTD4906N-35G can handle significant power without overheating or performance degradation.
• High Maximum Junction Temperature: It can operate at a high temperature, with a maximum junction temperature (T<sub>j) of 175°C, ensuring reliability in high-temperature environments.
• Fast Switching Speed: This MOSFET is designed for fast switching applications, which is essential for reducing switching losses in power conversion systems.
• Voltage Rating: It has a drain-to-source voltage (V<sub>DSS) of 30 V, making it suitable for a variety of low to medium voltage applications.

Applications

The versatility of the NTD4906N-35G allows it to be used in a diverse array of applications, including:

• DC/DC Converters
• Power Supply Load Switches
• Motor Drives
• Battery Management Systems
• Switch Mode Power Supplies (SMPS)

Product Specifications

Parameter Value Package / Case TO-252-3 R<sub>DS(on) 8.7 mΩ @ V<sub>GS = 10 V I<sub>D 30 A V<sub>DSS 30 V T<sub>j -55°C to +175°C

With its robust construction and ON Semiconductor's commitment to quality, the NTD4906N-35G is a reliable and cost-effective solution for designers looking to enhance the efficiency and performance of their power management systems.