The NTD4913NT4G is a high-performance Power MOSFET produced by ON Semiconductor, designed to meet the requirements of a wide range of applications. This device is a testament to ON Semiconductor's commitment to providing power management solutions that combine energy efficiency with high reliability and performance.

Key Features

• Type: N-Channel
• Technology: Trench
• Drain-to-Source Voltage (V<sub>DS): 30V
• Continuous Drain Current (I<sub>D): 17.4A
• Power Dissipation (P<sub>D): 2.5W
• R<sub>DS(on): 7.5 mOhm at V<sub>GS = 10V
• Gate Charge (Q<sub>g): 17.5 nC
• Package: DPAK (TO-252)

Applications

The NTD4913NT4G is suitable for a wide range of applications, including:

• Power Management
• DC/DC Converters
• Motor Drives
• Automotive Applications
• Switching Regulators
• Load Switch

Performance Benefits

This MOSFET is designed to deliver high-efficiency performance with a low on-resistance and low gate charge, making it an ideal choice for power-sensitive applications. The device's robustness is enhanced by its ability to withstand high energy pulses in the avalanche and commutation modes. This feature, along with the device's high current capacity and thermal performance, makes it a reliable choice for rigorous environments.

Quality and Reliability

ON Semiconductor's NTD4913NT4G is built with the highest quality standards, ensuring that it meets the stringent requirements of industrial and automotive-grade applications. The MOSFET is RoHS compliant, reflecting ON Semiconductor's commitment to environmental sustainability.

Conclusion

The NTD4913NT4G from ON Semiconductor represents a blend of advanced technology, high performance, and reliability. Whether for power management in consumer electronics or for driving motors in industrial settings, this MOSFET stands out as a top choice for designers and engineers seeking to optimize their power systems.