The NTD4960N-35G is a high-performance Power MOSFET produced by ON Semiconductor, a leading figure in the field of energy-efficient innovations. This MOSFET is designed to meet the demanding requirements of modern electronic circuits, providing efficient power management and switching with reduced heat generation.

Key Features

• Low R<sub>DS(on): This device offers an exceptionally low on-resistance, which translates into higher efficiency and less power loss during operation.
• High Current Capacity: With the ability to handle a continuous drain current of 30 A, the NTD4960N-35G is well-suited for high-power applications.
• 35V Maximum Drain-to-Source Voltage: It can sustain a maximum voltage of 35V across the drain and source terminals, making it robust for various applications.
• Fast Switching Speed: The MOSFET is designed for fast switching, enabling efficient operation at high frequencies.
• Low Gate Charge: A low gate charge facilitates quicker switching speeds and reduces switching losses, further enhancing the overall efficiency of the device.

Applications

The NTD4960N-35G is versatile and can be used in a wide range of applications, including:

• Power Management Systems
• DC/DC Converters
• Motor Drives
• Computing and Server Power Supplies
• Automotive Systems

Quality and Reliability

ON Semiconductor is committed to delivering high-quality products. The NTD4960N-35G is no exception, built to meet rigorous standards ensuring reliability and performance even in harsh conditions. The device is RoHS compliant, ensuring adherence to environmental standards by excluding hazardous substances.

Package and Availability

The NTD4960N-35G comes in a TO-252 (DPAK) package, which is widely used and suitable for compact PCB layouts. Its surface-mount design allows for efficient assembly in automated manufacturing processes. Check with authorized distributors for availability and bulk ordering options.