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NTD5865N-1G

Part No NTD5865N-1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 43A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 43A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 23nC @ 10V
Max Input Capacitance 1261pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 71W (Tc)
Maximum Rds On at Id,Vgs 18 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK-3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1083841-NTD5865N-1G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NTD5865N-1G CAD Model

Description

ON Semiconductor NTD5865N-1G Power MOSFET

The ON Semiconductor NTD5865N-1G is a high-performance Power MOSFET designed to meet the rigorous demands of various electronic applications. This device is part of ON Semiconductor's portfolio of energy-efficient MOSFETs, which are renowned for their low on-resistance and high switching performance. The NTD5865N-1G is an ideal choice for power management tasks in a wide range of products, including computing devices, consumer electronics, and industrial systems.

Constructed with advanced Trench Technology, the NTD5865N-1G offers an optimal balance between low on-state resistance (RDS(on)) and gate charge (Qg), which enhances its overall efficiency and performance. This Power MOSFET comes in a TO-252 (DPAK) package, which is known for its compact footprint and excellent thermal characteristics, making it suitable for space-constrained applications that require efficient heat dissipation.

Key features of the NTD5865N-1G include:

  • Voltage Rating (VDS): 60V, which ensures reliable operation under various voltage conditions.
  • Continuous Drain Current (ID): 40A, allowing the device to handle significant current loads without performance degradation.
  • Low RDS(on): 8.3mΩ (typical) at VGS = 10V, minimizing power losses and improving efficiency.
  • Fast Switching Speed: The device's fast switching capability reduces switching losses and improves performance in high-frequency applications.
  • Low Gate Charge (Qg): Reduces the energy required to turn the MOSFET on and off, which is critical for conserving power in switching applications.

The NTD5865N-1G is also characterized by its robustness, with features like a 175°C maximum junction temperature and an integrated diode for fast recovery. These attributes make it extremely reliable in challenging environments and under stressful operating conditions.

Whether you're designing power supplies, motor controllers, or other high-efficiency applications, the ON Semiconductor NTD5865N-1G Power MOSFET is an excellent choice that combines performance, efficiency, and reliability to meet the needs of today's energy-conscious designs.

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