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NTD65N03RT4G

Part No NTD65N03RT4G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 9.5A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 9.5A (Ta), 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 16nC @ 5V
Max Input Capacitance 1400pF @ 20V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.3W (Ta), 50W (Tc)
Maximum Rds On at Id,Vgs 8.4 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package DPAK
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 060628-NTD65N03RT4G
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian NTD65N03RT4G CAD Model

Description

ON Semiconductor NTD65N03RT4G - Power MOSFET

The NTD65N03RT4G is a high-performance Power MOSFET brought to you by ON Semiconductor, a leader in energy-efficient innovations. This MOSFET is designed to meet the requirements of a wide range of applications, from computing and networking to power management systems. It is particularly well-suited for high-speed switching applications due to its low on-state resistance and high current handling capabilities.

Key Features

  • Low R<sub>DS(on) Technology: The NTD65N03RT4G features ON Semiconductor's proprietary low on-state resistance technology, which minimizes power loss during operation, leading to higher efficiency and reduced heat generation.
  • High Continuous Drain Current (I<sub>D): With a high continuous drain current of 65 A, this MOSFET can handle significant power, making it an ideal choice for demanding applications.
  • Robust Thermal Performance: Its excellent thermal characteristics ensure reliable performance even under high temperature operating conditions.
  • Logic Level Gate Drive: The device can be driven by logic-level voltages, simplifying the design of control circuits and reducing overall system complexity.

Applications

  • DC/DC Converters
  • Motor Control
  • Power Supply Modules
  • Automotive Systems

Product Specifications

Parameter Value V<sub>DS (Drain-to-Source Voltage) 30 V I<sub>D (Continuous Drain Current) 65 A R<sub>DS(on) (On-State Resistance) 7.8 mΩ Package / Case TO-252 (DPAK)

The NTD65N03RT4G is housed in a TO-252 (DPAK) package, which is known for its compact footprint and excellent power dissipation characteristics. This makes it a suitable choice for space-constrained applications. ON Semiconductor's commitment to quality ensures that this MOSFET provides reliable performance and helps to extend the life of your product.

Whether you are designing power supplies, working on motor control, or developing automotive systems, the NTD65N03RT4G from ON Semiconductor is a robust and efficient solution that can help you achieve your design goals.

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Pricing & Ordering

Quantity Unit Price Ext. Price
3+ $25.9621 $77.8863
6+ $21.3028 $127.8168
9+ $20.6364 $185.7276
12+ $19.9711 $239.6532
15+ $19.3058 $289.5870
21+ $17.3088 $363.4848
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,400 pieces
MOQ: 3 pcs
Order Increment : 1 pcs
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