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NTD78N03-1G

Part No NTD78N03-1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 11.4A IPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 11.4A (Ta), 78A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 35nC @ 4.5V
Max Input Capacitance 2250pF @ 12V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.4W (Ta), 64W (Tc)
Maximum Rds On at Id,Vgs 6 mOhm @ 78A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package I-Pak
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 1083860-NTD78N03-1G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NTD78N03-1G CAD Model

Description

ON Semiconductor NTD78N03-1G Power MOSFET

The NTD78N03-1G is a high-performance Power MOSFET brought to you by ON Semiconductor, a trusted leader in innovative energy-efficient electronics. This MOSFET is specifically designed to meet the rigorous demands of a variety of applications, providing a combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness.

Key Features:

  • Low R<sub>DS(on): The NTD78N03-1G features a low drain-source on-resistance, which translates to reduced conduction losses and improved overall efficiency. This makes it ideal for high-efficiency power management applications.
  • High Current Capability: With the ability to handle a continuous drain current of up to 78A, this MOSFET can support high current loads, making it suitable for heavy-duty operations.
  • High-Speed Switching: Designed for fast switching performance, the NTD78N03-1G is capable of operating at high frequencies, which is beneficial for applications such as switching power supplies and motor control.
  • Robust Thermal Performance: The device's power package is engineered to provide excellent thermal performance, ensuring reliability even under high temperature operating conditions.
  • Logic Level Gate Drive: It can be driven from a logic level voltage, which simplifies the gate drive circuitry in certain applications.

Applications:

The NTD78N03-1G is versatile and can be used in a wide range of applications, including:

  • DC/DC converters
  • Power management for computers and servers
  • Motor drives
  • Power supplies for consumer electronics
  • Automotive systems
  • Switching regulators

Product Specifications:

The NTD78N03-1G MOSFET operates with a drain-source voltage (V<sub>DS) of 30V, a gate-source voltage (V<sub>GS) of ±20V, and a maximum junction temperature (T<sub>j) of 175°C. It is available in a TO-252 (DPAK) package, which is designed for surface mount technology (SMT) and is compatible with standard manufacturing processes.

ON Semiconductor's commitment to quality ensures that the NTD78N03-1G MOSFET meets the stringent requirements of industrial, automotive, and consumer markets. By choosing this device, designers will benefit from reduced system power loss, enhanced power density, and improved reliability in their power conversion and management applications.

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