EN
  • EN
  • DE

NTGD4169FT1G

Part No NTGD4169FT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 2.6A 6-TSOP
Datasheet
Sample
Rohs State rohs
ECAD Module
Need Help

Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 2.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 5.5nC @ 4.5V
Max Input Capacitance 295pF @ 15V
Maximum Gate-Source Voltage ±12V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 900mW (Ta)
Maximum Rds On at Id,Vgs 90 mOhm @ 2.6A, 4.5V
Temperature Range - Operating -25°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Dimension SOT-23-6
Win Source Part Number 1083880-NTGD4169FT1G
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian NTGD4169FT1G CAD Model

Description

The NTGD4169FT1G is a cutting-edge Power MOSFET from ON Semiconductor, designed to deliver high efficiency and reliability for a wide range of applications. This compact and powerful component is a testament to ON Semiconductor's commitment to providing innovative solutions that meet the evolving needs of the electronics industry.

Key Features

  • Low On-Resistance: The NTGD4169FT1G boasts an exceptionally low on-resistance, which translates to reduced power loss during operation and improved overall efficiency.
  • High-Speed Switching: Engineered for high-speed switching applications, this MOSFET minimizes transition losses and is ideal for high-frequency power conversion systems.
  • Dual N-Channel Configuration: This device features a dual N-channel configuration, providing design flexibility and the potential for reduced component count in certain circuit designs.
  • Power Dissipation: With an impressive power dissipation capability, the NTGD4169FT1G can handle significant power levels, making it suitable for demanding environments.
  • Compact Footprint: The small form factor of this MOSFET ensures that it can be easily integrated into space-constrained applications without sacrificing performance.

Applications

The NTGD4169FT1G is versatile and can be used in various applications, including:

  • Power Management Systems
  • DC-DC Converters
  • Battery Powered Devices
  • Motor Control Circuits
  • Switch Mode Power Supplies (SMPS)

Quality and Environmental Compliance

ON Semiconductor is dedicated to not only delivering high-performance components but also to ensuring that their products meet rigorous quality and environmental standards. The NTGD4169FT1G is compliant with RoHS (Restriction of Hazardous Substances) directives, indicating that it is manufactured with a commitment to environmental responsibility.

Conclusion

The NTGD4169FT1G from ON Semiconductor represents a blend of performance, efficiency, and environmental consciousness. Whether for power management, conversion, or control, this Power MOSFET is an excellent choice for designers looking to optimize their electronic systems. Its robust design and compliance with environmental standards make it a reliable and sustainable choice for a multitude of electronic applications.

You May Also Be Interested in

Toshiba Semiconductor and Storage
Switching Regulator Applications
Lowest to $1.6817
Toshiba Semiconductor and Storage
Switching Voltage Regulators
Lowest to $5.4227
Hitachi, Ltd
Silicon N-Channel MOS FET UHF Power Amplifier
Need more? Email Us
Alpha & Omega Semiconductor Inc.
250V,20A N-Channel MOSFET
Lowest to $0.3708
NEC
MOS FIELD EFFECT TRANSISTOR
Need more? Email Us
Rohm Semiconductor
4V Drive Nch MOS FET
Lowest to $0.0439
NXP / Nexperia
N-channel TrenchMOS FET Rev. 01 — 4 October 2010
Lowest to $6.6447
Panjit
Advanced Trench Process Technology
Lowest to $0.2356
Analog Devices Inc.
Dual 5 A, 20 V Synchronous Step-Down
Need more? Email Us

Top Sellers

Nexperia USA Inc.
Counter Shift Registers 8-bit serial-in, serial or parallel-out shift register with output latches; 3 - state
Lowest to $0.1046
Kemet
RELAY GEN PURPOSE DPDT 2A 5V
Lowest to $0.9677
Texas Instruments
DARLINGTON TRANSISTOR ARRAY | TRANS 8NPN DARL 50V 0.5A 18SO
Lowest to $5.2271
FTDI, Future Technology Devices International Ltd
IC USB SERIAL BASIC UART 16SSOP
Lowest to $5.9399
FTDI, Future Technology Devices International Ltd
IC USB SERIAL BASIC UART 16SSOP
Lowest to $5.9399
Texas Instruments
IC CTRLR HOT SWAP 48V 10-MSOP
Lowest to $3.5640
JST Sales America Inc.
CONN HEADER GH TOP 4POS 1.25MM
Lowest to $0.1782
FTDI, Future Technology Devices International Ltd
IC USB SERIAL BASIC UART 16QFN
Lowest to $5.7023
ON Semiconductor
MOSFET N-CH 20V 915MA SOT-416
Lowest to $0.0543
JST Sales America Inc.
CONN HEADER SMD 6POS 1.25MM
Lowest to $0.4985
Bosch Sensortec
SENSOR PRESSURE HUMIDITY TEMP
Lowest to $3.9204
Cypress Semiconductor Corp
IC MCU USB PERIPH HI SPD 128LQFP
Texas Instruments
TRANS 8NPN DARL 50V 0.5A 18SO
Lowest to $5.4647
TDK InvenSense
MOTION SENSOR / Accelerometer, Gyroscope, 6 Axis Sensor Output
Lowest to $17.8196
FTDI, Future Technology Devices International Ltd
IC USB HS QUAD UART/SYNC 64-LQFP
Lowest to $13.7805
Availability: Check Availability & Quote
Notify Me When Available

Shipping Information

Shipped from HK warehouse
Expected Shipping Date Get an estimate

Contact Us

*
*
*

FRAUD PREVENTION REMINDERS

Recently, We have discovered that criminals falsely claimed to be WIN SOURCE to commit fraud. Please note that the only official website & email suffix are win-source.group, win-source.net, winsourcectl.com and winsourceelec.com

More details about fraud prevention
RFQ RFQ RFQ BOM BOM BOM API API API Sell Sell Sell your Excess