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NTGS3447PT1G

Part No NTGS3447PT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 12V 3.4A 6-TSOP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 12V
Continuous Drain Current at 25°C 3.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 15nC @ 4.5V
Max Input Capacitance 1053pF @ 6V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 700mW (Ta)
Maximum Rds On at Id,Vgs 40 mOhm @ 4.7A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Dimension SOT-23-6
Win Source Part Number 261085-NTGS3447PT1G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NTGS3447PT1G CAD Model

Description

ON Semiconductor NTGS3447PT1G - MOSFET Overview

The NTGS3447PT1G is a high-performance Power MOSFET from ON Semiconductor, designed to meet a wide range of power management requirements in modern electronic devices. This compact and efficient MOSFET is a perfect solution for space-constrained applications that demand low on-resistance and high switching performance.

Key Features

  • Low On-Resistance: The NTGS3447PT1G boasts an extremely low on-resistance, which translates to reduced power loss and improved overall efficiency in circuits.
  • High-Speed Switching: Designed for fast switching applications, this MOSFET can handle high frequencies with ease, making it ideal for power conversion and regulation tasks.
  • Power Saving: With its low threshold voltage, the device ensures minimal power usage in standby modes, contributing to energy-saving designs.
  • Advanced Packaging: Housed in a small, leadless package, the NTGS3447PT1G saves precious board space and is optimized for low inductance and low thermal resistance.
  • Robustness: The MOSFET is designed to withstand high energy pulses in the avalanche and commutation modes, ensuring reliable performance under stressful conditions.

Applications

The versatility of the NTGS3447PT1G makes it suitable for a broad array of applications, including:

  • DC/DC converters
  • Power management systems
  • Battery powered devices
  • Load switches
  • Motor control circuits

Technical Specifications

The NTGS3447PT1G is characterized by its impressive technical specifications:

  • Voltage Rating: 30 V
  • Continuous Drain Current: 4.9 A
  • Pulsed Drain Current: 19.6 A
  • Power Dissipation: 1.4 W
  • Operating Temperature Range: -55°C to 150°C

Conclusion

ON Semiconductor's NTGS3447PT1G is an exemplary MOSFET that combines efficiency, high-speed operation, and compactness. It is an excellent choice for designers looking to optimize their power management solutions with a reliable and robust component. The NTGS3447PT1G represents a synergy of performance and miniaturization, aligning with the needs of modern electronic advancements.

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