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NTGS4141NT1G

Part No NTGS4141NT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 3.5A 6-TSOP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 12nC @ 10V
Max Input Capacitance 560pF @ 24V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 500mW (Ta)
Maximum Rds On at Id,Vgs 25 mOhm @ 7A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Dimension SOT-23-6
Win Source Part Number 025762-NTGS4141NT1G
Family Name NTGS4141N
Introduction Date June 27, 2005
ECCN EAR99
Country of Origin Malaysia
Halogen Free Compliant
Estimated EOL Date 2024
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NTGS4141NT1G CAD Model

Description

The NTGS4141NT1G is a high-performance Power MOSFET from the reputable ON Semiconductor, designed for a wide range of applications requiring efficient power management. This device is a testament to ON Semiconductor's commitment to providing energy-efficient solutions to the electronics industry.

Key Features

  • Low RDS(on): The NTGS4141NT1G boasts a low on-resistance, which means it has minimal voltage drop across the device when conducting. This feature is crucial for power efficiency, reducing power loss and heat generation.
  • High Switching Speed: With fast switching capabilities, this MOSFET can turn on and off quickly, making it suitable for high-frequency applications and reducing switching losses.
  • Compact Footprint: Housed in a small SOT-23 package, the NTGS4141NT1G is ideal for space-constrained applications, allowing for high-density board designs.
  • Low Gate Charge: A low gate charge ensures that less energy is required to control the transistor, contributing to the overall efficiency of the device.
  • Robust Thermal Performance: The MOSFET is designed to handle significant power levels while maintaining a stable operating temperature, thanks to its excellent thermal characteristics.

Applications

The versatile NTGS4141NT1G is suitable for a broad range of applications, including:

  • Power Management
  • DC/DC Converters
  • Battery Management Systems
  • Motor Control Circuits
  • Switching Regulators

Specifications

Parameter Value
Drain-to-Source Voltage (VDSS) 20V
Continuous Drain Current (ID) 3.7A
Power Dissipation (PD) 1.25W
Operating Temperature Range -55°C to +150°C

In summary, the NTGS4141NT1G from ON Semiconductor is a reliable and efficient solution for designers looking to optimize their power management systems. Its combination of low on-resistance, high switching speed, and compact packaging make it an excellent choice for a multitude of electronic applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
185+ $0.3160 $58.4600
395+ $0.2957 $116.8015
610+ $0.2855 $174.1550
875+ $0.2651 $231.9625
1,135+ $0.2549 $289.3115
1,420+ $0.2448 $347.6160
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,520 pieces
MOQ: 185 pcs
Order Increment : 1 pcs
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