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NTHD4401PT3G

Part No NTHD4401PT3G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 20V 2.1A CHIPFET
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 2.1A
Maximum Rds On at Id,Vgs 155 mOhm @ 2.1A, 4.5V
Gate-Source Threshold Voltage 1.2V @ 250μA
Max Gate Charge 6nC @ 4.5V
Max Input Capacitance 300pF @ 10V
Maximum Power Dissipation 1.1W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package ChipFET
Win Source Part Number 111261-NTHD4401PT3G
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian NTHD4401PT3G CAD Model

Description

ON Semiconductor NTHD4401PT3G Dual P-Channel Power MOSFET

The ON Semiconductor NTHD4401PT3G is a high-performance, dual P-Channel Power MOSFET designed to deliver efficient power management and switching in a compact package. This MOSFET is an ideal choice for applications requiring low voltage operation and power conservation, making it suitable for portable electronics, power management systems, and other space-constrained applications.

Featuring a small footprint, the NTHD4401PT3G comes in a ChipFET package, which is optimized for reduced on-resistance and minimal gate charge, ensuring low conduction and switching losses. The device boasts an impressive 20V drain-source voltage (Vds) and a continuous drain current (Id) of -3.7A at 25°C, which demonstrates its capability to handle significant power for its size.

Key features of the NTHD4401PT3G include:

  • Low Threshold Voltage: The device has a low gate threshold voltage, making it suitable for low voltage applications where power efficiency is critical.
  • High-Speed Switching: Fast switching speeds reduce transition losses and improve overall efficiency in high-frequency circuits.
  • Thermal Management: The MOSFET's superior thermal characteristics ensure reliable operation even under high temperature conditions.
  • Dual MOSFET Configuration: The integration of two P-Channel MOSFETs in one package allows for compact circuit design, saving space and reducing component count.

With its robust design, the NTHD4401PT3G provides enhanced electrostatic discharge (ESD) protection, safeguarding the device against sudden voltage spikes that can occur during handling or operation. Additionally, the MOSFET is RoHS compliant, adhering to environmental standards that restrict the use of hazardous substances in electronic components.

Whether you're designing power management circuits for mobile devices, load switches, or any other application that demands high efficiency and reliability, the ON Semiconductor NTHD4401PT3G Dual P-Channel Power MOSFET is an excellent choice that combines performance with practicality.

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