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NTHL020N090SC1

Part No NTHL020N090SC1
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description SICFET N-CH 900V 118A TO247-3 / N-Channel 900 V 118A (Tc) 503W (Tc) Through Hole TO-247-3
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Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer onsemi
Packaging Tube
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 900 V
Current - Continuous Drain (Id) @ 25°C 118A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V
Rds On (Max) @ Id, Vgs 28mOhm @ 60A, 15V
Vgs(th) (Max) @ Id 4.3V @ 20mA
Gate Charge (Qg) (Max) @ Vgs 196 nC @ 15 V
Vgs (Max) +19V, -10V
Input Capacitance (Ciss) (Max) @ Vds 4415 pF @ 450 V
Power Dissipation (Max) 503W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Through Hole
Supplier Device Package TO-247-3
Case / Package TO-247-3
Base Product Number NTHL020
RoHS Status ROHS3 Compliant
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number 488-NTHL020N090SC1
Standard Package 30
Win Source Part Number 1324440-NTHL020N090SC1
Ultra Librarian 3D Model Ultra Librarian NTHL020N090SC1 CAD Model

Description

Product Overview: NTHL020N090SC1 - ON Semiconductor

The NTHL020N090SC1 is a high-performance, N-channel power MOSFET from ON Semiconductor, designed to meet the rigorous demands of modern electronic circuits. Engineered with state-of-the-art technology, this MOSFET provides exceptional efficiency, thermal performance, and reliability for a wide range of applications including power management, switching, and high-speed circuitry.

Key Features

  • Low On-Resistance: The NTHL020N090SC1 boasts an extremely low on-resistance (R<sub>DS(on)), which enhances its efficiency by minimizing conduction losses.
  • High Continuous Drain Current: With a robust continuous drain current (I<sub>D) capability, this MOSFET is suitable for handling high current loads without performance degradation.
  • High Switching Speed: The device's fast switching speed ensures minimal switching losses, making it ideal for high-frequency applications.
  • Enhanced Thermal Performance: The package design and materials used in the NTHL020N090SC1 allow for superior heat dissipation, ensuring reliable operation even under strenuous conditions.
  • Low Gate Charge: A low gate charge (Q<sub>G) reduces the power required to drive the MOSFET, contributing to the overall energy efficiency of the system.

Applications

The versatility of the NTHL020N090SC1 makes it an ideal choice for a variety of applications, including:

  • DC/DC Converters
  • Power Supply Modules
  • Motor Drives
  • Automotive Electronics
  • Switch Mode Power Supplies (SMPS)

Product Specifications

Parameter Value Drain-to-Source Voltage (V<sub>DSS) 900 V Continuous Drain Current (I<sub>D) 2 A Power Dissipation (P<sub>D) 125 W Operating Temperature Range -55°C to 150°C Package TO-247

The NTHL020N090SC1 from ON Semiconductor represents a blend of performance and durability, offering designers a reliable and efficient power MOSFET solution. Its robust design and technical specifications ensure it can meet the needs of the most demanding electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
3+ $25.6036 $76.8108
6+ $21.0081 $126.0486
9+ $20.3516 $183.1644
12+ $19.6951 $236.3412
16+ $19.0386 $304.6176
21+ $17.0691 $358.4511
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Availability: 5,068 pieces
MOQ: 3 pcs
Order Increment : 1 pcs
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