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NTJD4105CT2

Part No NTJD4105CT2
Manufacturer ON Semiconductor
Catalog FETs - Arrays
Description MOSFET N/P-CH 20V/8V SOT-363
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Mfr ON Semiconductor
Package Tape & Reel
Product Status Obsolete
Technology MOSFET (Metal Oxide)
Configuration N and P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V, 8V
Current - Continuous Drain (Id) @ 25°C 630mA, 775mA
Rds On (Max) @ Id, Vgs 375mOhm @ 630mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 46pF @ 20V
Power - Max 270mW
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-88/SC70-6/SOT-363
Base Product Number NTJD4105
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 649829-NTJD4105CT2
Ultra Librarian 3D Model Ultra Librarian NTJD4105CT2 CAD Model

Description

The NTJD4105CT2 is a high-performance, dual N-Channel Power MOSFET module crafted by ON Semiconductor, a leading figure in the semiconductor industry. This product is designed to cater to the needs of modern electronic applications where efficiency, reliability, and miniaturization are of paramount importance.

Featuring two independent N-Channel MOSFETs in a compact, surface-mount package, the NTJD4105CT2 is ideal for applications that require space-saving components without sacrificing performance. Each MOSFET in the device is capable of handling a continuous drain current, ensuring that the module can support high-current operations with ease.

The NTJD4105CT2 boasts a low on-resistance, which translates to reduced power losses during operation and enhances overall energy efficiency. This characteristic is particularly beneficial in power management circuits, DC/DC converters, and other power-intensive applications. Additionally, the MOSFET's fast switching speed ensures that it can respond quickly to changes in load conditions, making it suitable for high-frequency applications.

ON Semiconductor has designed the NTJD4105CT2 with robustness in mind. The device is equipped with built-in protection features such as thermal shutdown and current limiting, which safeguard the MOSFET against adverse conditions that might otherwise compromise its performance or longevity. These features make the NTJD4105CT2 a reliable choice for critical applications where failure is not an option.

The NTJD4105CT2 is also characterized by its low threshold voltage, which allows for efficient operation even at lower gate drive voltages. This makes it compatible with a wide range of control circuits and enables its use in low-voltage applications.

In summary, the ON Semiconductor NTJD4105CT2 Dual N-Channel Power MOSFET is a versatile and durable component that offers exceptional performance in a variety of electronic applications. Its combination of power efficiency, fast switching, and protective features, all packaged in a space-saving design, make it an excellent choice for designers looking to optimize their power management solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
305+ $0.1652 $50.3860
740+ $0.1356 $100.3440
1,145+ $0.1314 $150.4530
1,575+ $0.1271 $200.1825
2,035+ $0.1229 $250.1015
2,725+ $0.1102 $300.2950
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 75,000 pieces
MOQ: 305 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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