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NTJS3157NT1G

Part No NTJS3157NT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 3.2A SOT-363
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 3.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 15nC @ 4.5V
Max Input Capacitance 500pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 1W (Ta)
Maximum Rds On at Id,Vgs 60 mOhm @ 4A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-88/SC70-6/SOT-363
Dimension 6-TSSOP, SC-88, SOT-363
Win Source Part Number 025781-NTJS3157NT1G
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name NTJS3157N
Introduction Date October 14, 2004
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2024
Ultra Librarian 3D Model Ultra Librarian NTJS3157NT1G CAD Model

Description

ON Semiconductor NTJS3157NT1G Product Overview

The NTJS3157NT1G is a cutting-edge Power MOSFET brought to you by ON Semiconductor, a leader in energy-efficient innovations. This high-performance component is designed to meet the rigorous demands of modern electronic circuits, providing a compact, yet powerful solution for switching applications.

Key Features

  • Low On-Resistance: The NTJS3157NT1G boasts an ultra-low on-resistance, which significantly reduces conduction losses and enhances overall efficiency.
  • High Switching Speed: Engineered for rapid switching, this MOSFET can handle high-frequency operations with ease, making it ideal for power management in portable electronics.
  • Low Threshold Voltage: The device operates at a low threshold voltage, ensuring low-voltage drive capability and minimizing power consumption.
  • ESD Protection: Built-in ESD protection guards against electrostatic discharge events, providing reliability and longevity in sensitive applications.
  • Compact Package: The NTJS3157NT1G comes in a small SOT-363 package, which is perfect for space-constrained applications without compromising on power and performance.

Applications

ON Semiconductor's NTJS3157NT1G is versatile enough to be used in a wide array of applications. It is particularly well-suited for power management tasks in portable devices, such as smartphones, tablets, and laptops. Additionally, it can be utilized in load switch circuits, DC-DC converters, and motor control systems where efficient power handling is crucial. Its robustness also makes it a reliable choice for industrial automation and automotive applications, where durability and performance are non-negotiable.

Environmental and Quality Certifications

The NTJS3157NT1G from ON Semiconductor is compliant with various environmental standards, including RoHS and Pb-Free, which ensures that it meets the global requirements for hazardous substance control. Furthermore, the product is backed by ON Semiconductor's commitment to quality, reflected in their ISO certifications for quality management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
210+ $0.2438 $51.1980
500+ $0.2000 $100.0000
775+ $0.1938 $150.1950
1,070+ $0.1875 $200.6250
1,380+ $0.1813 $250.1940
1,850+ $0.1625 $300.6250
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,680 pieces
MOQ: 210 pcs
Order Increment : 1 pcs
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