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NTLGD3502NT1G

Part No NTLGD3502NT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description Power MOSFET 20 V, 5.8 A/4.6 A Dual N-Channel, DFN6 3x3 mm Package
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Part Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain Source Voltage 20V
Current - Continuous Drain (Id) @ 25°C 4.3A, 3.6A
Rds On (Maximum) @ Id, Vgs 60 mOhm @ 4.3A, 4.5V
Vgs(th) (Maximum) @ Id 2V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 4nC @ 4.5V
Input Capacitance (Ciss) (Maximum) @ Vds 480pF @ 10V
Power - Max 1.74W
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Package 6-VDFN Exposed Pad
Manufacturer Package 6-DFN (3x3)
Win Source Part Number 1232522-NTLGD3502NT1G
Manufacturer Homepage www.onsemi.com
Popularity Medium
Supply and Demand Status Limited
Family Name NTLGD3502N
Introduction Date July 24, 2007
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date Obsolete
Ultra Librarian 3D Model Ultra Librarian NTLGD3502NT1G CAD Model

Description

ON Semiconductor NTLGD3502NT1G - Power MOSFET

The ON Semiconductor NTLGD3502NT1G is a high-performance Power MOSFET designed to meet the rigorous demands of power regulation applications. This compact, surface-mount transistor is part of ON Semiconductor's leading-edge portfolio of energy-efficient devices, offering designers a perfect balance between efficiency and robustness.

Key Features

  • Low On-Resistance: The NTLGD3502NT1G boasts an extremely low on-resistance (R<sub>DS(on)), which translates to reduced conduction losses and improved overall efficiency in applications.
  • High Current Capacity: With the ability to handle substantial current levels, this MOSFET is suitable for high-power applications, ensuring reliability even under strenuous conditions.
  • Dual Gate Configuration: The dual gate design enables better control and faster switching speeds, making it ideal for high-frequency operations.
  • PowerTrench® Technology: ON Semiconductor's proprietary PowerTrench® process is engineered to optimize the device's forward and reverse recovery time, which helps to minimize losses and noise in power switching circuits.
  • Low Profile: The NTLGD3502NT1G comes in a small, leadless package that allows for a low-profile PCB design, providing space-saving advantages for compact electronic assemblies.

Applications

The NTLGD3502NT1G is versatile and can be used in a wide array of applications, including:

  • DC/DC Converters
  • Power Management for Portable Devices
  • Motor Control Systems
  • Computing and Server Power Supplies
  • Automotive Systems

Product Specifications

With a continuous drain current of up to 6.3 A and a drain-source voltage of 20 V, the NTLGD3502NT1G can efficiently manage power in medium to high-power circuits. Its thermal management is enhanced by the 1.6 W power dissipation, ensuring stable operation over a wide temperature range.

Reliability and Quality

ON Semiconductor is known for its commitment to quality and reliability. The NTLGD3502NT1G is manufactured with stringent quality control processes, ensuring high performance and durability for the end-user. With its advanced features and reliable operation, the NTLGD3502NT1G is an excellent choice for designers looking to enhance the efficiency and longevity of their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.7849 $58.8675
180+ $0.6440 $115.9200
280+ $0.6239 $174.6920
385+ $0.6038 $232.4630
495+ $0.5837 $288.9315
665+ $0.5232 $347.9280
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,000 pieces
MOQ: 10 pcs
Order Increment : 1 pcs
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