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NTLJD2105LTBG

Part No NTLJD2105LTBG
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 8V 2.5A 6-WDFN
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
FET Type N and P-Channel
FET Feature Standard
Drain-Source Breakdown Voltage 8V
Continuous Drain Current at 25°C 2.5A
Maximum Rds On at Id,Vgs 50 mOhm @ 4A, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Maximum Power Dissipation 520mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-WDFN (2x2)
Win Source Part Number 060656-NTLJD2105LTBG
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NTLJD2105LTBG CAD Model

Description

The ON Semiconductor NTLJD2105LTBG is a high-performance, dual P-Channel Power MOSFET designed to deliver efficient power management and control in a compact package. This advanced technology device is a perfect choice for a wide range of applications, including load switching, power conversion, and motor control in consumer electronics, automotive, and industrial systems.

Key Features

  • Low On-Resistance: The NTLJD2105LTBG offers exceptionally low on-resistance, which translates to reduced power loss and improved efficiency in electronic circuits.
  • Dual P-Channel Configuration: With two P-Channel MOSFETs in one package, this device allows for space-saving designs and simplified PCB layout.
  • High Power and Current Handling: This MOSFET is capable of handling high levels of power and current, making it suitable for demanding applications.
  • Advanced Trench Technology: ON Semiconductor's cutting-edge trench technology enhances performance by minimizing on-state resistance and increasing load efficiency.
  • Compact Package: Housed in a Pb-free, Halogen-free and RoHS compliant WDFN6 2x2, 0.8P package, the NTLJD2105LTBG is designed for space-constrained applications.

Electrical Characteristics

  • Voltage Rating: The device has a drain-source voltage (Vds) rating of -20V, making it suitable for low to medium voltage applications.
  • Continuous Drain Current: It offers a continuous drain current (Id) of -3.5A, ensuring reliable operation under typical load conditions.
  • Gate Threshold Voltage: The gate threshold voltage (Vgs(th)) is specified as a nominal value, enabling precise control over the switching characteristics.

Applications

The NTLJD2105LTBG is versatile enough to be used in a variety of applications, including:

  • Power Management in Portable Devices
  • DC/DC Converters
  • Load/Power Switching Circuits
  • Battery Management Systems
  • Motor Control in Automotive Systems

With its robust design and superior performance, the NTLJD2105LTBG from ON Semiconductor is an ideal choice for engineers looking to enhance the efficiency and reliability of their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
3+ $20.1513 $60.4539
7+ $16.5350 $115.7450
11+ $16.0187 $176.2057
15+ $15.5013 $232.5195
20+ $14.9850 $299.7000
26+ $13.4350 $349.3100
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,500 pieces
MOQ: 3 pcs
Order Increment : 1 pcs
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