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NTLJF3117PT1G

Part No NTLJF3117PT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 2.3A 6-WDFN / Trans MOSFET P-CH 20V 3.3A 6-Pin WDFN EP T/R
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Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 6.2nC @ 4.5V
Max Input Capacitance 531pF @ 10V
Maximum Gate-Source Voltage ±8V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 710mW (Ta)
Maximum Rds On at Id,Vgs 100 mOhm @ 2A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-WDFN (2x2)
Dimension 6-WDFN Exposed Pad
Win Source Part Number 025788-NTLJF3117PT1G
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name NTLJF3117P
Introduction Date January 20, 2006
ECCN EAR99
Country of Origin Malaysia
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian NTLJF3117PT1G CAD Model

Description

ON Semiconductor NTLJF3117PT1G Power MOSFET

The NTLJF3117PT1G from ON Semiconductor is a high-performance, Power MOSFET designed to deliver efficient power management and conversion for a broad range of applications. This device is a testament to ON Semiconductor's commitment to providing energy-efficient solutions that meet the evolving needs of modern electronic systems.

Featuring advanced trench technology, the NTLJF3117PT1G offers low on-resistance and a high current handling capability, making it an excellent choice for power-intensive applications. The MOSFET operates as an N-channel device with a maximum continuous drain current of 5.8 A, which ensures that it can handle significant power without overheating.

The device boasts a low threshold voltage of 2.1 V (typical), which allows for efficient operation even at lower gate voltages. This characteristic is particularly beneficial for battery-operated devices where power conservation is crucial. Additionally, with a maximum power dissipation of 1.4 W, the NTLJF3117PT1G is engineered to operate reliably even in demanding situations.

Encased in a compact SOT-23 package, the NTLJF3117PT1G is designed for space-constrained applications. Its small footprint makes it an ideal choice for portable electronics, where size and efficiency are of paramount importance. Despite its diminutive size, the SOT-23 package provides excellent thermal performance, ensuring the MOSFET remains cool during operation.

ON Semiconductor's NTLJF3117PT1G is versatile and can be used in a variety of circuits, including load switches, DC-DC converters, and power management modules. Its robustness is further highlighted by its ability to operate over a wide temperature range, from -55°C to 150°C, which guarantees performance in extreme conditions.

With its combination of low on-resistance, high current capability, and efficient power handling, the NTLJF3117PT1G Power MOSFET from ON Semiconductor is an excellent choice for designers looking to optimize their power management systems for efficiency and reliability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
205+ $0.2458 $50.3890
435+ $0.2302 $100.1370
675+ $0.2225 $150.1875
970+ $0.2069 $200.6930
1,260+ $0.1991 $250.8660
1,570+ $0.1914 $300.4980
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 14,176 pieces
MOQ: 205 pcs
Order Increment : 1 pcs
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