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SIHG47N60E-GE3

Part No SIHG47N60E-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 47A TO247AC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 47A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 220nC @ 10V
Max Input Capacitance 9620pF @ 100V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 357W (Tc)
Maximum Rds On at Id,Vgs 64 mOhm @ 24A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247AC
Dimension TO-247-3
Win Source Part Number 211705-SIHG47N60E-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SIHG47N60E-GE3 CAD Model

Description

The SIHG47N60E-GE3 is a N-Channel MOSFET manufactured by Vishay.

  • Popularity: medium
  • Maximum Power Dissipation: 357W (Tc)
  • Drain-Source Breakdown Voltage: 600V
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 220nC @ 10V
  • Maximum Input Capacitance: 9620pF @ 100V
  • Maximum Rds on: 64 mOhm @ 24A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $8.6944 $52.1664
13+ $8.1441 $105.8733
20+ $7.8690 $157.3800
28+ $7.3187 $204.9236
36+ $7.0436 $253.5696
45+ $6.7684 $304.5780
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,044 pieces
MOQ: 6 pcs
Order Increment : 1 pcs
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