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NTLUD3A260PZTBG

Part No NTLUD3A260PZTBG
Manufacturer ON Semiconductor
Catalog FETs - Arrays
Description MOSFET 2P-CH 20V 1.3A 6UDFN
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Mfr ON Semiconductor
Package Tape & Reel
Product Status Obsolete
Technology MOSFET (Metal Oxide)
Configuration 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 1.3A
Rds On (Max) @ Id, Vgs 200mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 4.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 300pF @ 10V
Power - Max 500mW
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 6-UFDFN Exposed Pad
Supplier Device Package 6-UDFN (1.6x1.6)
Base Product Number NTLUD3
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 887771-NTLUD3A260PZTBG
Ultra Librarian 3D Model Ultra Librarian NTLUD3A260PZTBG CAD Model

Description

ON Semiconductor NTLUD3A260PZTBG - High Performance MOSFET

The NTLUD3A260PZTBG is a cutting-edge Power MOSFET device from ON Semiconductor, renowned for its high efficiency and robust performance in a variety of applications. This compact, yet powerful, component is designed to cater to the demanding needs of modern electronic circuits, providing a reliable solution for power management tasks.

Constructed using advanced trench technology, the NTLUD3A260PZTBG MOSFET offers a low on-state resistance (R<sub>DS(on)) which significantly improves its power efficiency. This feature is particularly beneficial in reducing conduction losses, making it an ideal choice for high-performance power supply systems and power conversion applications.

With a continuous drain current (I<sub>D) of up to 6A and a maximum drain-source voltage (V<sub>DSS) of 20V, this MOSFET is capable of handling moderate power levels while maintaining stable operation. Furthermore, its fast switching speed enhances the overall performance of the device, especially in fast-switching applications such as DC-DC converters, motor drives, and power inverters.

The NTLUD3A260PZTBG also boasts an ultra-low gate charge (Q<sub>G), which reduces the power required to drive the gate, thus minimizing the total power consumption of the system. This attribute is particularly useful in battery-powered devices where energy efficiency is paramount.

Encased in a compact Pb-free, Halogen-free and RoHS compliant package, the NTLUD3A260PZTBG ensures environmental friendliness without compromising on performance. Its small footprint makes it an excellent choice for space-constrained applications, while its robust thermal characteristics ensure reliability even under high temperature conditions.

With its combination of high efficiency, low power dissipation, and fast switching capabilities, the NTLUD3A260PZTBG from ON Semiconductor is an optimal choice for designers looking to enhance the performance of their power management systems while maintaining energy efficiency and thermal reliability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
290+ $0.2023 $58.6670
700+ $0.1660 $116.2000
1,080+ $0.1608 $173.6640
1,485+ $0.1556 $231.0660
1,920+ $0.1505 $288.9600
2,570+ $0.1349 $346.6930
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,000 pieces
MOQ: 290 pcs
Order Increment : 1 pcs
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