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NTMFS4707NT1G

Part No NTMFS4707NT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 6.9A SO8FL
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 6.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 15nC @ 4.5V
Max Input Capacitance 735pF @ 24V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1W (Ta)
Maximum Rds On at Id,Vgs 13 mOhm @ 10A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 5-DFN (5x6) (8-SOFL)
Dimension 8-PowerTDFN, 5 Leads
Win Source Part Number 025800-NTMFS4707NT1G
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Power Management, Motor Drive & Control, LED Lighting, Computers & Computer Peripherals, Portable Devices, Consumer Electronics
Ultra Librarian 3D Model Ultra Librarian NTMFS4707NT1G CAD Model

Description

ON Semiconductor NTMFS4707NT1G N-Channel Power MOSFET

The NTMFS4707NT1G is a high-performance N-Channel Power MOSFET produced by ON Semiconductor, a leading supplier in the semiconductor industry. This MOSFET is designed to accommodate a wide range of applications, including power management, switching regulators, and power conversion systems. Its advanced technology ensures efficient power handling and high-speed switching capabilities, making it an ideal choice for energy-sensitive and compact designs.

Key Features:

  • Low On-Resistance: The NTMFS4707NT1G boasts an exceptionally low on-resistance (RDS(on)), which translates to reduced conduction losses and improved overall efficiency in applications where it is deployed.
  • High Continuous Drain Current: With a high continuous drain current (ID), this MOSFET can handle significant power levels, making it suitable for demanding power applications.
  • High-Temperature Performance: It is designed to operate reliably at high temperatures, ensuring consistent performance even under thermal stress.
  • Fast Switching Speed: The device's fast switching speed is ideal for applications that require quick response times and high-frequency operation.
  • Power Efficiency: The power efficiency of the NTMFS4707NT1G is enhanced by its low gate charge (Qg), which minimizes the energy required to switch the device on and off.

Applications:

The versatility of the NTMFS4707NT1G allows it to be used in a variety of applications, including:

  • DC/DC Converters
  • Power Supply Units (PSUs)
  • Motor Drives
  • Automotive Systems
  • Synchronous Rectification
  • Power Over Ethernet (PoE) Applications

Product Specifications:

This MOSFET is encapsulated in a compact, surface-mount package that is RoHS compliant and halogen-free, adhering to environmental standards. The NTMFS4707NT1G has a drain-to-source voltage (VDSS) of 30V, and its advanced design ensures minimal parasitic inductance and capacitance, which contributes to its high-speed performance.

With its robust construction and superior electrical characteristics, the ON Semiconductor NTMFS4707NT1G N-Channel Power MOSFET is a reliable and efficient solution for designers looking to enhance the performance and energy efficiency of their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
16+ $3.7505 $60.0080
38+ $3.0774 $116.9412
59+ $2.9813 $175.8967
81+ $2.8851 $233.6931
104+ $2.7889 $290.0456
139+ $2.5003 $347.5417
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,696 pieces
MOQ: 16 pcs
Order Increment : 1 pcs
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