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NTMFS4935NT1G

Part No NTMFS4935NT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 13A SO8FL / Trans MOSFET N-CH 30V 21.8A 5-Pin(4+Tab) SO-FL T/R
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 13A (Ta), 93A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.2V @ 250μA
Max Gate Charge 49.4nC @ 10V
Max Input Capacitance 4850pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 930mW (Ta), 48W (Tc)
Maximum Rds On at Id,Vgs 3.2 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 5-DFN (5x6) (8-SOFL)
Dimension 8-PowerTDFN, 5 Leads
Win Source Part Number 025806-NTMFS4935NT1G
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Application Field Used in Power Management, Computers & Computer Peripherals, Industrial
Family Name NTMFS4935N
Introduction Date August 01, 2009
ECCN EAR99
Country of Origin Malaysia
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian NTMFS4935NT1G CAD Model

Description

ON Semiconductor NTMFS4935NT1G N-Channel Power MOSFET

The ON Semiconductor NTMFS4935NT1G is a high-performance, N-channel Power MOSFET designed to address a wide range of power management and switching applications. With its advanced silicon technology, this MOSFET offers superior switching performance, high efficiency, and robust thermal characteristics, making it an ideal choice for power supply, DC-DC conversion, and motor control applications.

This Power MOSFET is housed in a compact and efficient 5x6mm² footprint with a low-profile and low-resistance Power QFN package. The package is designed to optimize the thermal performance and minimize the on-resistance, which is crucial for high-efficiency power management systems. The NTMFS4935NT1G features a maximum continuous drain current of 30 A, allowing it to handle high current loads with ease.

Key specifications of the NTMFS4935NT1G include a drain-to-source voltage (VDS) of 30V, which ensures that the device can be used in systems with high voltage requirements. The gate-to-source voltage (VGS) is rated at ±20V, providing a wide margin for gate drive design flexibility. Additionally, the device boasts an ultra-low on-resistance (RDS(on)) of 4.4 mΩ at VGS = 10V, contributing to reduced conduction losses and improved power efficiency.

The NTMFS4935NT1G also features fast switching speeds, which are vital for reducing switching losses in high-frequency power conversion systems. This is supported by its low total gate charge (Qg) and low gate-to-drain charge (Qgd), which enhance the overall switching performance. Moreover, the device is characterized by a robust body diode with a low reverse recovery charge (Qrr), making it suitable for synchronous rectification and other applications that demand efficient diode performance.

With its excellent thermal characteristics, the NTMFS4935NT1G can operate at a junction temperature range of -55°C to 150°C, ensuring reliability and stability across various temperature conditions. The device is also RoHS compliant and halogen-free, demonstrating ON Semiconductor's commitment to environmental sustainability.

In summary, the ON Semiconductor NTMFS4935NT1G is a versatile and efficient N-channel Power MOSFET that offers low on-resistance, fast switching speeds, and robust thermal performance for a wide array of power management applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
135+ $0.4294 $57.9690
330+ $0.3524 $116.2920
510+ $0.3414 $174.1140
700+ $0.3303 $231.2100
905+ $0.3194 $289.0570
1,215+ $0.2864 $347.9760
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Availability: 30,763 pieces
MOQ: 135 pcs
Order Increment : 1 pcs
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