The NTMFS4935NCT1G is a cutting-edge Power MOSFET brought to you by ON Semiconductor, a leader in energy-efficient innovations. This high-performance, N-channel MOSFET is designed to meet a wide range of power management requirements, making it an ideal choice for applications in the automotive, industrial, and computing sectors.
Key Features
- Low RDS(on): The NTMFS4935NCT1G boasts an exceptionally low on-resistance, which translates to reduced conduction losses and improved overall efficiency in electronic circuits.
- High Continuous Drain Current (ID): With the capability to support a high continuous drain current, this MOSFET can handle significant power levels, making it suitable for demanding applications.
- Enhanced Thermal Performance: The device features an optimized package design that ensures superior thermal performance, enabling it to operate reliably even under high-temperature conditions.
- Single Pulse Avalanche Energy Rated: It is engineered to withstand high energy pulses in the avalanche and commutation modes, ensuring robustness and long-term reliability.
Applications
The NTMFS4935NCT1G is versatile and can be used in various applications, including:
- Power supply units
- DC-DC converters
- Motor drives
- Automotive applications
- Switching circuits
Product Specifications
| Parameter |
Value |
| Package |
SO-8FL |
| VDS (Drain-Source Voltage) |
30V |
| RDS(on) (at VGS = 10V) |
4.5 mΩ |
| ID (Continuous Drain Current) |
48A |
With its robust package, high efficiency, and the quality assurance of ON Semiconductor, the NTMFS4935NCT1G is designed to deliver top performance and reliability for a wide array of power applications. Its combination of low on-resistance, high current capability, and thermal efficiency make it a prime choice for designers looking to optimize their power management solutions.