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NTMS4920NR2G

Part No NTMS4920NR2G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 10.6A 8SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 10.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 58.9nC @ 10V
Max Input Capacitance 4068pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 820mW (Ta)
Maximum Rds On at Id,Vgs 4.3 mOhm @ 7.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOIC
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 006256-NTMS4920NR2G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NTMS4920NR2G CAD Model

Description

Introducing the NTMS4920NR2G Power MOSFET by ON Semiconductor

The NTMS4920NR2G is a cutting-edge power MOSFET device designed and manufactured by the renowned ON Semiconductor. This high-performance, N-channel MOSFET is engineered to deliver efficient power management and conversion for a wide range of applications. It is an ideal component for modern electronic circuits requiring low on-resistance and high switching speeds.

Key Features

  • Low R<sub>DS(on): The NTMS4920NR2G boasts an exceptionally low on-resistance, which translates to reduced power losses and improved efficiency in operation. This feature is crucial for applications that demand high energy efficiency.
  • High Switching Speed: With its fast switching capabilities, this MOSFET can handle high-frequency operations with ease, making it suitable for power supplies, DC-DC converters, and other applications requiring rapid switching.
  • Advanced Technology: Utilizing the latest advancements in semiconductor technology, the NTMS4920NR2G offers superior performance that ON Semiconductor is known for.
  • Robust Thermal Performance: The device is encapsulated in a compact, surface-mount package that aids in excellent thermal management, ensuring reliability even under high-temperature conditions.

Applications

The versatility of the NTMS4920NR2G allows it to be used in various applications, including:

  • Power Management Systems
  • DC-DC Converters
  • Motor Drives
  • Computing and Server Applications
  • Telecommunication Equipment

Quality and Reliability

ON Semiconductor is committed to providing products that meet the highest standards of quality and reliability. The NTMS4920NR2G is no exception and is built to ensure consistent performance and longevity. It is RoHS compliant, reflecting ON Semiconductor's dedication to environmental sustainability and safety.

Technical Specifications

The NTMS4920NR2G operates with a 30V drain-source voltage (V<sub>DS), has a continuous drain current (I<sub>D) of 13.5A, and features a gate-source voltage (V<sub>GS) of ±20V. Its low threshold voltage ensures ease of drive, and its compact package (SO-8) makes it suitable for space-constrained designs.

For engineers and designers looking for a reliable and efficient power MOSFET, the NTMS4920NR2G from ON Semiconductor is an excellent choice that combines performance with durability.

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