ON Semiconductor NTMSD3P102R2 Power MOSFET

The ON Semiconductor NTMSD3P102R2 is a high-performance Power MOSFET designed to meet the rigorous demands of power management applications. This device is a part of ON Semiconductor's portfolio of energy-efficient power MOSFETs that are engineered to reduce power losses, improve efficiency, and extend the life of electronic products.

Key Features

• Low R<sub>DS(on): The NTMSD3P102R2 boasts an exceptionally low on-resistance, which translates into minimal conduction losses and improved overall efficiency in power conversion applications.
• High Power Density: With its compact footprint, this MOSFET offers a high power density, making it an ideal choice for space-constrained applications that require high performance.
• Advanced Trench Technology: Utilizing ON Semiconductor's advanced trench technology, the NTMSD3P102R2 offers superior performance in terms of switching speed and gate charge, leading to less power dissipation during operation.
• Robust Thermal Performance: The device is designed to handle high thermal loads, ensuring reliability and longevity even under high temperature operating conditions.

Applications

The NTMSD3P102R2 is versatile and can be used in a wide range of applications, including:

• DC/DC converters
• Power supply modules
• Motor drives
• Computing systems
• Automotive applications
• LED lighting solutions

Product Specifications

The NTMSD3P102R2 is a N-channel MOSFET with the following specifications:

• VDSS: 30V
• ID: 13A
• R<sub>DS(on): 8.8 mΩ at V<sub>GS = 10V
• Package: Micro8™

ON Semiconductor's commitment to innovation is evident in the NTMSD3P102R2, making it an excellent choice for designers looking to optimize their power management systems. The combination of low on-resistance, high efficiency, and advanced technology makes this MOSFET a powerful component for a variety of electronic applications.