The Rohm Semiconductor 027476-RRQ030P03TR is a P-Channel MOSFET with a drain-source breakdown voltage of 30V and a continuous drain current of 3A at 25°C.

• Drain-Source Breakdown Voltage: 30V
• Continuous Drain Current: 3A @ 25°C
• Gate-Source Threshold Voltage: 2.5V @ 1mA
• Maximum Gate Charge: 12nC @ 10V
• Maximum Input Capacitance: 480pF @ 10V
• Maximum Rds On: 75 mOhm @ 3A @ 10V
• Package: TSMT6 (SC-95) and SOT-23-6 Thin, TSOT-23-6 dimensions
• Mounting Technology: SMD (SMT)
• Power Dissipation: 600mW (Ta)
• Drive Voltage: 4V and 10V
• Not for New Designs: Yes
• Operating Temperature Range: 150°C (TJ)