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NTP18N06G

Part No NTP18N06G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 15A TO220AB
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 22nC @ 10V
Max Input Capacitance 450pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 48.4W (Tc)
Maximum Rds On at Id,Vgs 90 mOhm @ 7.5A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1083962-NTP18N06G
Popularity Medium
Supply and Demand Status Sufficient
Application Field Used in Industrial
Ultra Librarian 3D Model Ultra Librarian NTP18N06G CAD Model

Description

ON Semiconductor NTP18N06G Overview

The NTP18N06G is a robust Power MOSFET device designed and manufactured by ON Semiconductor, a leading supplier in the semiconductor industry. This high-performance component is part of the Power MOSFET series, which are widely recognized for their efficiency and reliability in various applications. The NTP18N06G is specifically engineered to address the needs of power switching circuits, offering a perfect blend of low on-resistance and fast switching performance.

Key Features

  • Voltage and Current: The NTP18N06G boasts a drain-to-source voltage (V<sub>DS) of 60V and a continuous drain current (I<sub>D) of 18A, making it suitable for handling moderate power levels in electronic circuits.
  • Low R<sub>DS(on): It features a low on-state resistance (R<sub>DS(on)) which minimizes conduction losses, thereby improving overall energy efficiency.
  • Fast Switching: The device is designed with fast switching capabilities, which reduces transition losses and allows for high-speed operation in power conversion applications.
  • Thermal Management: The NTP18N06G is encapsulated in a TO-220 package, which provides excellent thermal conduction away from the MOSFET die, ensuring stable performance even under high load conditions.
  • Gate Charge: It features an optimized gate charge (Q<sub>G) that improves the overall performance in switching applications by reducing the power required to drive the MOSFET.

Applications

The NTP18N06G is versatile and can be used in a wide range of applications, including:

  • Power supply units
  • DC-DC converters
  • Motor drives
  • Automotive systems
  • Switching regulators
  • LED lighting

Quality and Reliability

ON Semiconductor is committed to delivering high-quality products. The NTP18N06G MOSFET is no exception and is built to meet stringent industry standards. It is designed for enhanced ruggedness and reliability, making it a trusted choice for designers and engineers looking for a dependable component for their power management solutions.

Conclusion

In summary, the NTP18N06G from ON Semiconductor stands out as a high-performance Power MOSFET that combines efficiency, speed, and reliability. Its robust design and thermal efficiency make it a go-to choice for a variety of power switching applications. With its strong feature set, the NTP18N06G is an essential component for any application requiring efficient power management and conversion.

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Pricing & Ordering

Quantity Unit Price Ext. Price
12+ $4.8262 $57.9144
30+ $3.9600 $118.8000
46+ $3.8362 $176.4652
63+ $3.7126 $233.8938
81+ $3.5887 $290.6847
108+ $3.2175 $347.4900
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,026 pieces
MOQ: 12 pcs
Order Increment : 1 pcs
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