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NTP6412ANG

Part No NTP6412ANG
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 58A TO-220AB
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 58A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 100nC @ 10V
Max Input Capacitance 3500pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 167W (Tc)
Maximum Rds On at Id,Vgs 18.2 mOhm @ 58A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 1083988-NTP6412ANG
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian NTP6412ANG CAD Model

Description

ON Semiconductor NTP6412ANG MOSFET

The ON Semiconductor NTP6412ANG is a high-performance, N-channel Power MOSFET designed to deliver efficient power management and conversion for a wide range of applications. This advanced MOSFET technology is tailored for load switching and power conversion in computing, consumer electronics, and industrial systems.

Key Features

  • Low On-Resistance: The NTP6412ANG features a low on-resistance (R<sub>DS(on)), which minimizes conduction losses and improves overall efficiency, making it ideal for high-efficiency power supply designs.
  • High Current Capability: With a continuous drain current (I<sub>D) rating, this MOSFET can handle significant current loads, making it suitable for high-power applications.
  • Fast Switching Speed: The fast switching capabilities of the NTP6412ANG reduce switching losses and enhance performance in high-frequency power conversion systems.
  • Robust Thermal Performance: The device's excellent thermal characteristics ensure reliability and longevity even in applications with demanding thermal environments.
  • Logic Level Gate Drive: The MOSFET can be driven directly from low-voltage logic circuits, simplifying the design and reducing the need for additional driver circuits.

Applications

  • DC/DC Converters
  • Power Supply Modules
  • Motor Drives
  • Battery Management Systems
  • Switch Mode Power Supplies (SMPS)

The NTP6412ANG is housed in a TO-220 package, which is widely used and recognized for its ease of installation and robustness. This package also provides excellent heat dissipation characteristics, which is crucial for maintaining performance and reliability under high-power operation.

ON Semiconductor's commitment to quality and performance is evident in the NTP6412ANG MOSFET. It is designed to meet the stringent requirements of modern electronic systems, providing designers with a reliable and efficient power management solution.

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