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NTR4503NT1G

Part No NTR4503NT1G
Manufacturer ON Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 30V 2A 3-Pin SOT-23 T/R / MOSFET N-CH 30V 1.5A SOT-23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 7nC @ 10V
Max Input Capacitance 250pF @ 24V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 420mW (Ta)
Maximum Rds On at Id,Vgs 110 mOhm @ 2.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-3 (TO-236)
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 025828-NTR4503NT1G
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Application Field Used in Power Management, Portable Devices, Computers & Computer Peripherals, Industrial
Family Name NTR4503N
Introduction Date December 09, 2003
ECCN EAR99
Country of Origin China, Taiwan
Halogen Free Compliant
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian NTR4503NT1G CAD Model

Description

ON Semiconductor NTR4503NT1G: High-Performance P-Channel MOSFET

The NTR4503NT1G is a cutting-edge P-Channel MOSFET brought to you by ON Semiconductor, a leader in the semiconductor industry. This product is designed to deliver high efficiency and reliability for a wide range of applications. With its compact SOT-23 package, the NTR4503NT1G is perfect for space-constrained applications where a small footprint is essential.

The device features a drain-source voltage (V<sub>DS) of -30V and a continuous drain current (I<sub>D) of -4.7A at 25°C, which makes it suitable for high-performance power management tasks. Additionally, the NTR4503NT1G boasts an R<sub>DS(on) of just 70 mΩ at a gate-source voltage (V<sub>GS) of -4.5V, ensuring minimal power loss and improved efficiency in your circuit designs.

One of the key benefits of the NTR4503NT1G is its low threshold voltage, which allows for operation at lower gate voltages, reducing power consumption and making it an ideal choice for battery-powered devices. Its fast switching speed enhances performance in high-frequency applications, while the low gate charge (Q<sub>G) reduces the energy required to turn the MOSFET on and off, further conserving power.

Built with ON Semiconductor's advanced technology, the NTR4503NT1G is designed to withstand rigorous conditions while maintaining its performance. It features a robust body diode that can handle high surge currents, providing additional protection against unexpected voltage spikes in your system.

The NTR4503NT1G is RoHS compliant and halogen-free, reflecting ON Semiconductor's commitment to environmental sustainability. This product is suitable for a variety of applications, including load switch circuits, power management in portable devices, and other power conversion and regulation scenarios where a high-efficiency P-Channel MOSFET is required.

Whether you're designing power supplies, motor controls, or looking to optimize the power efficiency of your next project, the NTR4503NT1G from ON Semiconductor offers the performance and reliability needed to get the job done.

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Pricing & Ordering

Quantity Unit Price Ext. Price
780+ $0.0642 $50.0760
1,665+ $0.0601 $100.0665
2,585+ $0.0581 $150.1885
3,700+ $0.0541 $200.1700
4,810+ $0.0520 $250.1200
6,000+ $0.0500 $300.0000
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 121,001 pieces
MOQ: 780 pcs
Order Increment : 1 pcs
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